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參數資料
| 型號： | W29EE512Q-70B |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | PROM |
| 英文描述： | 64K X 8 CMOS FLASH MEMORY |
| 中文描述： | 64K X 8 FLASH 5V PROM, 70 ns, PDSO32 |
| 封裝： | VSOP1-32 |
| 文件頁數： | 1/22頁 |
| 文件大小： | 295K |
| 代理商： | W29EE512Q-70B |
W29EE512
64K
′
8 CMOS FLASH MEMORY
Publication Release Date: February 18, 2002
- 1 -
Revision A7
GENERAL DESCRIPTION
The W29EE512 is a 512K bit, 5-volt only CMOS flash memory organized as 64K
×
8 bits. The device
can be programmed and erased in-system with a standard 5V power supply. A 12-volt V
PP
is not
required. The unique cell architecture of the W29EE512 results in fast program/erase operations with
extremely low current consumption (compared to other comparable 5-volt flash memory products). The
device can also be programmed and erased using standard EPROM programmers.
FEATURES
Single 5-volt program and erase operations
Fast page-write operations
128 bytes per page
Page program cycle: 10 mS (max.)
Effective byte-program cycle time: 39
μ
S
Optional software-protected data write
Fast chip-erase operation: 50 mS
Read access time: 70/90/120 nS
Typical page program/erase cycles: 1K/10K
Ten-year data retention
Software and hardware data protection
Low power consumption
Active current: 50 mA (max.)
Standby current: 100
μ
A (max.)
Automatic program timing with internal V
PP
generation
End of program detection
Toggle bit
Data polling
Latched address and data
TTL compatible I/O
JEDEC standard byte-wide pinouts
Available packages: 32-pin PLCC, TSOP and
VSOP
相關PDF資料 |
PDF描述 |
|---|---|
| W29EE512Q-90 | 64K X 8 CMOS FLASH MEMORY |
| W29EE512Q-90B | 64K X 8 CMOS FLASH MEMORY |
| W29EE512P-12 | Multiple Conductor Wire; Number of Conductors:4; Conductor Size AWG:20; No. Strands x Strand Size:7 x 28; Approval Categories:UL NEC/CUL,CEC; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Voltage Nom.:300V RoHS Compliant: Yes |
| W29EE512P-12B | Shielded Paired Cable; Number of Conductors:4; Conductor Size AWG:22; No. Strands x Strand Size:7 x 30; Shielding Material:Foil; Shielding Coverage:100%; Number of Pairs:2; Leaded Process Compatible:Yes; Approval Bodies:UL RoHS Compliant: Yes |
| W29EE512T-90 | 64K X 8 CMOS FLASH MEMORY |
相關代理商/技術參數 |
參數描述 |
|---|---|
| W29EE512Q-90 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:64K X 8 CMOS FLASH MEMORY |
| W29EE512Q-90B | 制造商:WINBOND 制造商全稱:Winbond 功能描述:64K X 8 CMOS FLASH MEMORY |
| W29EE512S-12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| W29EE512S-70 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| W29EE512S-90 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
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