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參數資料
| 型號： | W332M64V-100SBC |
| 廠商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分類： | DRAM |
| 英文描述： | 32M X 64 SYNCHRONOUS DRAM, 7 ns, PBGA208 |
| 封裝： | 13 X 22 MM, PLASTIC, BGA-208 |
| 文件頁數： | 1/15頁 |
| 文件大小： | 355K |
| 代理商： | W332M64V-100SBC |
1
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
W332M64V-XSBX
August 2007
Rev. 4
GENERAL DESCRIPTION
The 256MByte (2Gb) SDRAM is a high-speed CMOS,
dynamic random-access, memory using 4 chips containing
536,870,912 bits. Each chip is internally congured as a
quad-bank DRAM with a synchronous interface. Each of
the chip’s 134,217,728-bit banks is organized as 8,192
rows by 1,024 columns by 16 bits.
Read and write accesses to the SDRAM are burst ori-
ented; accesses start at a selected location and continue
for a programmed number of locations in a programmed
sequence. Accesses begin with the registration of an
ACTIVE command, which is then followed by a READ or
WRITE command. The address bits registered coincident
with the ACTIVE command are used to select the bank
and row to be accessed (BA0, BA1 select the bank; A0-
12 select the row). The address bits registered coincident
with the READ or WRITE command are used to select the
starting column location for the burst access.
The SDRAM provides for programmable READ or WRITE
burst lengths of 1, 2, 4 or 8 locations, or the full page, with
a burst terminate option. An AUTO PRECHARGE function
may be enabled to provide a self-timed row precharge that
is initiated at the end of the burst sequence.
The 2Gb SDRAM uses an internal pipelined architecture to
achieve high-speed operation. This architecture is compatible
with the 2n rule of prefetch architectures, but it also allows
the column address to be changed on every clock cycle to
achieve a high-speed, fully random access. Precharging
one bank while accessing one of the other three banks
will hide the precharge cycles and provide seamless, high-
speed, random-access operation.
The 2Gb SDRAM is designed to operate at 3.3V. An auto
refresh mode is provided, along with a power-saving,
power-down mode.
32Mx64 Synchronous DRAM
FEATURES
High Frequency = 100, 125, 133MHz
Package:
208 Plastic Ball Grid Array (PBGA), 13 x 22mm
3.3V ±0.3V power supply
Fully Synchronous; all signals registered on positive
edge of system clock cycle
Internal pipelined operation; column address can be
changed every clock cycle
Internal banks for hiding row access/precharge
Programmable Burst length 1,2,4,8 or full page
8192 refresh cycles
Commercial, Industrial and Military Temperature
Ranges
Organized as 32M x 64
Weight: W332M64V-XSBX - 1.4 grams typical
BENEFITS
73% SPACE SAVINGS
Reduced part count
Reduced trace lengths for lower parasitic
capacitance
Suitable for hi-reliability applications
* This product is to change without notice.
Discrete Approach
ACTUAL SIZE
S
A
V
I
N
G
S
Area
4 x 265mm2 = 1060mm2
286mm2
73%
22
13
11.9
22.3
54
TSOP
54
TSOP
54
TSOP
54
TSOP
White
Electronic
Designs
W332M64V
-XSBX
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相關代理商/技術參數 |
參數描述 |
|---|---|
| W332M64V-100SBI | 制造商:Microsemi Corporation 功能描述:32M X 64 SDRAM, 3.3V, 100MHZ, 208 PBGA, INDUSTRIAL TEMP. - Bulk |
| W332M64V-100SBM | 制造商:Microsemi Corporation 功能描述:32M X 64 SDRAM, 3.3V, 100MHZ, 208 PBGA, MIL-TEMP. - Bulk |
| W332M64V-125BC | 制造商:Microsemi Corporation 功能描述:32M X 64 SDRAM, 3.3V, 125MHZ, 219 PBGA, COMMERCIAL TEMP. - Bulk |
| W332M64V-125BI | 制造商:Microsemi Corporation 功能描述:32M X 64 SDRAM, 3.3V, 125MHZ, 219 PBGA, INDUSTRIAL TEMP. - Bulk |
| W332M64V-125BM | 制造商:Microsemi Corporation 功能描述:32M X 64 SDRAM, 3.3V, 125MHZ, 219 PBGA, MIL-TEMP. - Bulk |
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