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參數(shù)資料
| 型號(hào)： | W39L040Q-90 |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | PROM |
| 英文描述： | 512 K X 8 CMOS FLASH MEMORY |
| 中文描述： | 512K X 8 FLASH 3.3V PROM, 90 ns, PDSO32 |
| 封裝： | 8 X 14 MM, STSOP-32 |
| 文件頁數(shù)： | 1/27頁 |
| 文件大小： | 334K |
| 代理商： | W39L040Q-90 |
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W39L040
512K
×
8 CMOS FLASH MEMORY
Publication Release Date: February 10, 2003
- 1 -
Revision A3
1. GENERAL DESCRIPTION
The W39L040 is a 4Mbit, 3.3-volt only CMOS flash memory organized as 512K
×
8 bits. For flexible
erase capability, the 4Mbits of data are divided into 8 uniform sectors of 64 Kbytes, which are
composed of 16 smaller even pages with 4 Kbytes. The byte-wide (
×
8) data appears on DQ7
DQ0.
The device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt
V
PP
is not required. The unique cell architecture of the W39L040 results in fast program/erase
operations with extremely low current consumption (compared to other comparable 3.3-volt flash
memory products). The device can also be programmed and erased by using standard EPROM
programmers.
2. FEATURES
Single 3.3-volt operations
3.3-volt Read
3.3-volt Erase
3.3-volt Program
Fast Program operation:
Byte-by-Byte programming: 50
μ
S (max.)
Fast Erase operation:
Chip Erase cycle time: 100 mS (max.)
Sector Erase cycle time: 25 mS (max.)
Page Erase cycle time: 25 mS (max.)
Read access time: 70/90 nS
8 Even sectors with 64K bytes each, which is
composed of 16 flexible pages with 4K bytes
Any individual sector or page can be erased
Hardware protection:
Optional 16K byte or 64K byte Top/Bottom
Boot Block with lockout protection
Flexible 4K-page size can be used as
Parameter Blocks
Typical program/erase cycles: 1K/10K
Twenty-year data retention
Low power consumption
Active current: 10 mA (typ.)
Standby current: 2
μ
A (typ.)
End of program detection
Software method: Toggle bit/Data polling
TTL compatible I/O
JEDEC standard byte-wide pinouts
Available packages: 32L PLCC, 32L TSOP (8 x
20 mm) and 32L STSOP (8 x 14 mm)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| W39L040Q-90B | 512 K X 8 CMOS FLASH MEMORY |
| W39L040Q-90J | 512 K X 8 CMOS FLASH MEMORY |
| W39L040Q-90K | 512 K X 8 CMOS FLASH MEMORY |
| W39L040T-70 | 512 K X 8 CMOS FLASH MEMORY |
| W39L040T-70B | 512 K X 8 CMOS FLASH MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W39L040Q-90B | 制造商:WINBOND 制造商全稱:Winbond 功能描述:512 K X 8 CMOS FLASH MEMORY |
| W39L040Q-90J | 制造商:WINBOND 制造商全稱:Winbond 功能描述:512 K X 8 CMOS FLASH MEMORY |
| W39L040Q-90K | 制造商:WINBOND 制造商全稱:Winbond 功能描述:512 K X 8 CMOS FLASH MEMORY |
| W39L040T-70 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:512 K X 8 CMOS FLASH MEMORY |
| W39L040T-70B | 制造商:WINBOND 制造商全稱:Winbond 功能描述:512 K X 8 CMOS FLASH MEMORY |
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