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參數資料
型號: W3EG6467S262D4M
廠商: MICROSEMI CORP-PMG MICROELECTRONICS
元件分類: DRAM
英文描述: 64M X 64 DDR DRAM MODULE, 0.75 ns, DMA200
封裝: SO-DIMM-200
文件頁數: 1/12頁
文件大小: 194K
代理商: W3EG6467S262D4M
White Electronic Designs
1
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs Corp. reserves the right to change products or specications without notice.
W3EG6467S-D4
January 2005
Rev. 1
ADVANCED*
FEATURES
DDR200, DDR266, DDR333 and DDR400
JEDEC design specications
Double-data-rate architecture
Bi-directional data strobes (DQS)
Differential clock inputs (CK & CK#)
Programmable Read Latency 2,2.5 (clock)
Programmable Burst Length (2,4,8)
Programmable Burst type (sequential & interleave)
Edge aligned data output, center aligned data input
Auto and self refresh
Serial presence detect
Dual Rank
Power supply: 2.5V ± 0.20V
200 pin SO-DIMM package
Package height options
D4: 35.5mm (1.38")
NOTE: Consult factory for availability of:
RoHS compliant products
Vendor source control options
Industrial temperature option
DESCRIPTION
The W3EG6467S is a 2x32Mx64 Double Data Rate
SDRAM memory module based on 512Mb DDR SDRAM
component. The module consists of eight 32Mx16 DDR
SDRAMs in 66 pin TSOP packages mounted on a 200
pin FR4 substrate.
Synchronous design allows precise cycle control with the
use of system clock. Data 1/0 transactions are possible on
both edges and Burst Lengths allow the same device to be
useful for a variety of high bandwidth, high performance
memory system applications.
* This product is under development, is not qualied or characterized and is subject to
change or cancellation without notice.
512MB – 2x32Mx64 DDR SDRAM UNBUFFERED
OPERATING FREQUENCIES
DDR400@CL=3
DDR333@CL=2.5
DDR266@CL=2
DDR266@CL=2.5
DDR200@CL=2
Clock Speed
200MHz
166MHz
133MHz
100MHz
CL-tRCD-tRP
3-3-3
2.5-3-3
2-2-2
2.5-3-3
2-2-2
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