- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄276888 > W3EG6467S403D4M (MICROSEMI CORP-PMG MICROELECTRONICS) 64M X 64 DDR DRAM MODULE, 0.7 ns, DMA200 PDF資料下載
參數(shù)資料
| 型號： | W3EG6467S403D4M |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | DRAM |
| 英文描述： | 64M X 64 DDR DRAM MODULE, 0.7 ns, DMA200 |
| 封裝： | SO-DIMM-200 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大小： | 194K |
| 代理商： | W3EG6467S403D4M |
White Electronic Designs
1
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs Corp. reserves the right to change products or specications without notice.
W3EG6467S-D4
January 2005
Rev. 1
ADVANCED*
FEATURES
DDR200, DDR266, DDR333 and DDR400
JEDEC design specications
Double-data-rate architecture
Bi-directional data strobes (DQS)
Differential clock inputs (CK & CK#)
Programmable Read Latency 2,2.5 (clock)
Programmable Burst Length (2,4,8)
Programmable Burst type (sequential & interleave)
Edge aligned data output, center aligned data input
Auto and self refresh
Serial presence detect
Dual Rank
Power supply: 2.5V ± 0.20V
200 pin SO-DIMM package
Package height options
D4: 35.5mm (1.38")
NOTE: Consult factory for availability of:
RoHS compliant products
Vendor source control options
Industrial temperature option
DESCRIPTION
The W3EG6467S is a 2x32Mx64 Double Data Rate
SDRAM memory module based on 512Mb DDR SDRAM
component. The module consists of eight 32Mx16 DDR
SDRAMs in 66 pin TSOP packages mounted on a 200
pin FR4 substrate.
Synchronous design allows precise cycle control with the
use of system clock. Data 1/0 transactions are possible on
both edges and Burst Lengths allow the same device to be
useful for a variety of high bandwidth, high performance
memory system applications.
* This product is under development, is not qualied or characterized and is subject to
change or cancellation without notice.
512MB – 2x32Mx64 DDR SDRAM UNBUFFERED
OPERATING FREQUENCIES
DDR400@CL=3
DDR333@CL=2.5
DDR266@CL=2
DDR266@CL=2.5
DDR200@CL=2
Clock Speed
200MHz
166MHz
133MHz
100MHz
CL-tRCD-tRP
3-3-3
2.5-3-3
2-2-2
2.5-3-3
2-2-2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| W3H32M64E-667SBI | 32M X 64 DDR DRAM, 0.65 ns, PBGA208 |
| W3HG2128M72EER665D4MG | 256M X 72 MULTI DEVICE DRAM MODULE, ZMA200 |
| W7NCF02GH10CS2AG | 128M X 16 FLASH 3.3V PROM CARD, 150 ns, UUC |
| W7NCF02GH10CS4AG | 128M X 16 FLASH 3.3V PROM CARD, 150 ns, UUC |
| W7NCF02GH10CS5CG | 128M X 16 FLASH 3.3V PROM CARD, 150 ns, UUC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W3EG6467S-D4 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512MB - 2x32Mx64 DDR SDRAM UNBUFFERED |
| W3EG64M64ETSU335D4IMG | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512MB - 64Mx64 DDR SDRAM, UNBUFFERED, SO-DIMM |
| W3EG64M64ETSU335D4ISG | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512MB - 64Mx64 DDR SDRAM, UNBUFFERED, SO-DIMM |
| W3EG64M64ETSU335D4MG | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512MB - 64Mx64 DDR SDRAM, UNBUFFERED, SO-DIMM |
| W3EG64M64ETSU335D4SG | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512MB - 64Mx64 DDR SDRAM, UNBUFFERED, SO-DIMM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。