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參數資料
| 型號： | W3H32M64E-667ES |
| 英文描述： | 32M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package |
| 中文描述： | 32M的× 64 DDR2 SDRAM的208 PBGA封裝多芯片封裝 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 240K |
| 代理商： | W3H32M64E-667ES |
W3H32M64E-XSBX
ADVANCED*
1
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
October 2005
Rev. 3
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
32M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package
FEATURES
Data rate = 667*, 533, 400
Package:
208 Plastic Ball Grid Array (PBGA), 16 x 20mm
1.0mm pitch
DDR2 Data Rate = 667*, 533, 400
Supply Voltage = 1.8V ± 0.1V
Differential data strobe (DQS, DQS#) per byte
Internal, pipelined, double data rate architecture
4-bit prefetch architecture
DLL for alignment of DQ and DQS transitions with
clock signal
Four internal banks for concurrent operation
(Per DDR2 SDRAM Die)
Programmable Burst lengths: 4 or 8
Auto Refresh and Self Refresh Modes
On Die Termination (ODT)
Adjustable data – output drive strength
Programmable CAS latency: 3, 4 or 5
Posted CAS additive latency: 0, 1, 2, 3 or 4
Write latency = Read latency - 1* tCK
Commercial, Industrial and Military Temperature
Rang es
Organized as 32M x 64, user configurable as 2 x
32M x 32
Weight: W3H32M64E-XSBX - 2.5 grams typical
BENEFITS
62% SPACE SAVINGS vs. FPBGA
Re duced part count
42% I/O reduction vs FPBGA
Re duced trace lengths for low er par a sit c
ca pac ance
Suit able for hi-re i abil y ap pli ca ions
Upgradeable to 64M x 64 den si y (con act fac o y
for information)
* This product is under development, is not qualified or characterized and is subject
to change or cancellation without notice.
Area
I/O
Count
4 x 209mm
2
= 836mm
2
320mm
2
62%
4 x 90 balls = 360 balls
208 Balls
42%
S
A
V
I
N
G
S
Actual Size
W3H32M64E-XSBX
CSP Approach (mm)
90
FBGA
11.0
19.0
20
16
90
FBGA
11.0
90
FBGA
11.0
90
FBGA
11.0
FIGURE 1 – DENSITY COMPARISONS
W
W
相關PDF資料 |
PDF描述 |
|---|---|
| W3H32M64E-667ESI | 32M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package |
| W3H32M64E-667ESM | 32M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package |
| W3H32M64E-667SB | 32M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package |
| W3H32M64E-667SBC | 32M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package |
| W3H32M64E-667SBI | 32M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package |
相關代理商/技術參數 |
參數描述 |
|---|---|
| W3H32M64E-667ESC | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:32M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package |
| W3H32M64E-667ESI | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:32M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package |
| W3H32M64E-667ESM | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:32M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package |
| W3H32M64E-667SB | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:32M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package |
| W3H32M64E-667SBC | 制造商:Microsemi Corporation 功能描述:32M X 64 DDR2, 1.8V, 667MHZ, 208PBGA COMMERICAL TEMP. - Bulk |
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