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參數(shù)資料
| 型號(hào)： | W3H32M72E-SBM |
| 英文描述： | 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package |
| 中文描述： | 32M × 72配置DDR2 SDRAM的208 PBGA封裝多芯片封裝 |
| 文件頁(yè)數(shù)： | 1/30頁(yè) |
| 文件大小： | 934K |
| 代理商： | W3H32M72E-SBM |
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W3H32M72E-XSBX
PRELIMINARY*
1
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
February 2006
Rev. 2
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package
FEATURES
Data rate = 667*, 533, 400
Package:
208 Plastic Ball Grid Array (PBGA), 18 x 20mm
1.0mm pitch
Differential data strobe (DQS, DQS#) per byte
Internal, pipelined, double data rate architecture
4-bit prefetch architecture
DLL for alignment of DQ and DQS transitions with
clock signal
Four internal banks for concurrent operation
(Per DDR2 SDRAM Die)
Programmable Burst lengths: 4 or 8
Auto Refresh and Self Refresh Modes
On Die Termination (ODT)
Adjustable data – output drive strength
Single 1.8V ±0.1V supply
Programmable CAS latency: 3, 4, 5, or 6
Posted CAS additive latency: 0, 1, 2, 3 or 4
Write latency = Read latency - 1* tCK
Commercial, Industrial and Military Temperature
Rang es
Organized as 32M x 72
Weight: W3H32M72E-XSBX - 2.5 grams typical
BENEFITS
65% SPACE SAVINGS vs. FPBGA
Re duced part count
54% I/O reduction vs FPBGA
Re duced trace lengths for low er par a sit c
ca pac ance
Suit able for hi-re i abil y ap pli ca ions
Upgradable to 64M x 72 den si y (con act fac o y for
information)
* This product is under development, is not qualified or characterized and is subject
to change without notice.
Area
I/O
Count
5 x 209mm
2
= 1,045mm
2
360mm
2
65%
5 x 90 balls = 450 balls
208 Balls
54%
S
A
V
I
N
G
S
Actual Size
W3H32M72E-XSBX
CSP Approach (mm)
90
FBGA
11.0
19.0
20
18
90
FBGA
11.0
90
FBGA
11.0
90
FBGA
11.0
90
FBGA
11.0
FIGURE 1 – DENSITY COMPARISONS
White Electronic Designs
W3H32M72E-XSBX
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PDF描述 |
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| W3H32M72E-XSBX | 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package |
| W3H64M72E-400ES | 64M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package |
| W3H64M72E-400ESC | 64M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package |
| W3H64M72E-400ESI | 64M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W3H32M72E-XSBX | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package |
| W3H64M16E-400BI | 制造商:Microsemi Corporation 功能描述:64M X 64 DDR2, 1.8V, 400MHZ - Bulk |
| W3H64M64E-400SBC | 制造商:Microsemi Corporation 功能描述:64M X 64 DDR2, 1.8V, 400MHZ, 208PBGA COMMERICAL TEMP. - Bulk |
| W3H64M64E-400SBI | 制造商:Microsemi Corporation 功能描述:SDRAM MEMORY |
| W3H64M64E-400SBM | 制造商:Microsemi Corporation 功能描述:64M X 64 DDR2, 1.8V, 400MHZ, 208PBGA MIL-TEMP. - Bulk 制造商:Microsemi Corporation 功能描述:SDRAM MEMORY |
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