- 您現在的位置：買賣IC網 > PDF目錄361784 > W49L401TS70B EEPROM PDF資料下載
參數資料
| 型號： | W49L401TS70B |
| 元件分類： | EEPROM |
| 英文描述： | EEPROM |
| 中文描述： | EEPROM的 |
| 文件頁數： | 1/24頁 |
| 文件大小： | 307K |
| 代理商： | W49L401TS70B |
W49L401(T)
256K
′
16 CMOS FLASH MEMORY
Publication Release Date: August 16, 2002
- 1 -
Revision A4
1. GENERAL DESCRIPTION
The W49L401(T) is a 4-megabit, 3.3-volt only CMOS flash memory organized as 256K
×
16 bits. The
device can be programmed and erased in-system with a standard 3.3-volt power supply. A 12-volt V
PP
is not required. The unique cell architecture of the W49L401(T) results in fast program/erase
operations with extremely low current consumption (compared to other comparable 3.3-volt flash
memory products). The device can also be programmed and erased using standard EPROM
programmers.
2. FEATURES
Single Voltage operations:
3.0
3.6V Read/Erase/Program
Fast Program operation:
Word-by-Word programming: 30
μ
S (typ.)
Fast Erase operation:
Page/Block Erase time: 50 mS (typ.)
Chip Erase time: 200 mS (typ.)
Fast Read access time: 70 nS
Endurance: 10K cycles (typ.)
Twenty-year data retention
Hardware data protection
Block configuration
One 8K-word boot block with lockout
protection
Two 4K-word parameter blocks
One 16K-word main memory array block
Seven 32K-word main memory array blocks
128 uniform 2K-word pages
Optional Uniform Page configuration
Low power consumption
Active current: 10 mA (typ.)
Standby current: 5
μ
A (typ.)
Automatic program and erase timing with
internal V
PP
generation
End of program or erase detection
Toggle bit
Data polling
RY/#BY open-drain output provides hardware
end-of-write detection
Hardware #RESET pin
Latched address and data
TTL compatible I/O
JEDEC standard word-wide pinouts
Available packages: 44-pin SOP, 48-pin TSOP
相關PDF資料 |
PDF描述 |
|---|---|
| W49L401TT70B | EEPROM |
| W4DA25B | THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|200V V(RRM)|25A I(T) |
| W4DA25D | THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|400V V(RRM)|25A I(T) |
| W4DA25M | THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|600V V(RRM)|25A I(T) |
| W4DA25N | THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|800V V(RRM)|25A I(T) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| W49L401TT70B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM |
| W49R1C4VG-12DC-SCO | 功能描述:低信號繼電器 - PCB 10A/12V SPDT RoHS:否 制造商:NEC 觸點形式:2 Form C (DPDT-BM) 觸點電流額定值: 線圈電壓:5 V 最大開關電流:1 A 線圈電流:1 A 線圈類型:Non-Latching 功耗:140 mW 端接類型:SMT 絕緣: 介入損耗: |
| W49R1C4VG-24DC-SCO | 制造商:Magnecraft 功能描述: |
| W49R1C4VG5D | 制造商:Magnecraft 功能描述:3-5 Days |
| W49R1C4VG5DCSCO | 制造商:Magnecraft 功能描述:Mount Enclosed Power Relay |
發布緊急采購，3分鐘左右您將得到回復。