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參數(shù)資料
| 型號： | W49S201 |
| 廠商： | WINBOND ELECTRONICS CORP |
| 英文描述： | 128K×16bit CMOS Flash Memory With Synchronous Burst Read(具有同步脈沖讀模式的128K×16位CMOS閃速存儲器) |
| 中文描述： | 128K的× 16位的CMOS同步突發(fā)讀取快閃記憶體（具有同步脈沖讀模式的128K的× 16位的CMOS閃速存儲器） |
| 文件頁數(shù)： | 1/27頁 |
| 文件大小： | 349K |
| 代理商： | W49S201 |
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Preliminary W49S201
128K
×
16 CMOS FLASH MEMORY
WITH SYNCHRONOUS BURST READ
Publication Release Date: June 1999
- 1 -
Revision A1
GENERAL DESCRIPTION
The W49S201 is a 2-megabit, 5-volt only CMOS flash memory organized as 128K
×
16 bits. The
W49S201 supports both asynchronous & high performance synchronous burst read modes. The
device can be programmed and erased in-system with a standard 5V power supply. A 12-volt V
PP
is
not required. The unique cell architecture of the W49S201 results in fast program/erase operations
with extremely low current consumption (compared to other comparable 5-volt flash memory
products). The device can also be programmed and erased using standard EPROM programmers.
FEATURES
Single 5-volt operations:
5-volt Read
5-volt Erase
5-volt Program
Fast Program operation:
Word-by-Word programming: 50
μ
S (max.)
Fast Erase operation: 100 mS (typ.)
Fast Synchronous Burst Read access time:
15/17 nS (typ.)
High performance synchronous burst read
mode up to 50 MHz Clock Frequency
Support Linear Burst Mode Read with Wrap-
Around Feature.
No Burst Length Limitation.
Fast Asynchronous Random Read access
time: 55/70 nS
Endurance: 10K/100K cycles (Typical.)
Twenty-year data retention
Hardware data protection
Sector configuration
One 8K words boot block with lockout
protection
Two 8K words parameter blocks
One 104K words (208K bytes) Main Memory
Array Blocks
Low power consumption
Active current: 35 mA (typ.)
Standby current: 20
μ
A (typ.)
Automatic program and erase timing with
internal V
PP
generation
End of program or erase detection
Toggle bit
Data polling
Latched address and data
TTL compatible I/O
JEDEC standard word-wide pinouts
Packaged in 48-pin TSOP
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| W49V002P | Zener Diode; Application: Low noise; Pd (mW): 250; Vz (V): 3.4 to 3.8; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD |
| W49V002T | Zener Diode; Application: Low noise; Pd (mW): 250; Vz (V): 3.7 to 4.1; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD |
| W49V002 | 256K X 8 CMOS FLASH MEMORY WITH FWH INTERFACE |
| W49V002A | 256K x 8 CMOS FLASH MEMORY WITH LPC INTERFACE |
| W49V002AP | 256K x 8 CMOS FLASH MEMORY WITH LPC INTERFACE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W49V002 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:256K X 8 CMOS FLASH MEMORY WITH FWH INTERFACE |
| W49V002A | 制造商:WINBOND 制造商全稱:Winbond 功能描述:256K x 8 CMOS FLASH MEMORY WITH LPC INTERFACE |
| W49V002AP | 制造商:WINBOND 制造商全稱:Winbond 功能描述:256K x 8 CMOS FLASH MEMORY WITH LPC INTERFACE |
| W49V002AQ | 制造商:WINBOND 制造商全稱:Winbond 功能描述:256K x 8 CMOS FLASH MEMORY WITH LPC INTERFACE |
| W49V002FA | 制造商:WINBOND 制造商全稱:Winbond 功能描述:256K X 8 CMOS FLASH MEMORY WITH FWH INTERFACE |
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