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參數資料
| 型號： | W7NB80 |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 800V - 1.6ohm - 6.5A - TO-247 PowerMESH MOSFET |
| 中文描述： | N溝道800V的- 1.6ohm - 6.5A -對MOSFET的247 PowerMESH |
| 文件頁數： | 1/8頁 |
| 文件大?。?/td> | 88K |
| 代理商： | W7NB80 |
STW7NB80
N-CHANNEL 800V - 1.6
- 6.5A - TO-247
PowerMESH
MOSFET
I
TYPICAL R
DS(on)
= 1.6
I
EXTREMELYHIGH dv/dt CAPABILITY
I
±
30V GATE TO SOURCE VOLTAGERATING
I
100%AVALANCHE TESTED
I
VERY LOW INTRINSIC CAPACITANCES
I
GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family
of
power
outstanding performances.
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
MOSFETs
The
new
with
patent
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SWITCH MODE POWERSUPPLIES(SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWERSUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Parameter
Value
800
800
±
30
6.5
4.1
26
160
1.28
4
-65 to 150
150
Unit
V
V
V
A
A
A
W
W/
o
C
V/ns
o
C
o
C
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area
dv/dt(
1
)
T
stg
T
j
(1) I
SD
≤
6 A, di/dt
≤
200A/
μ
s, V
DD
≤
V
(BR)DSS
, Tj
≤
T
JMAX
TYPE
V
DSS
R
DS(on)
< 1.9
I
D
STW7NB80
800 V
6.5 A
December 1999
1
2
3
TO-247
1/8
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