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參數資料
| 型號： | W8NB80 |
| 廠商： | 意法半導體 |
| 英文描述： | N - CHANNEL 800V - 1.2ohm - 7.5A - TO-247 PowerMESH MOSFET |
| 中文描述： | ? -頻道800V的- 1.2ohm - 7.5A的-對MOSFET的247 PowerMESH |
| 文件頁數： | 1/5頁 |
| 文件大小： | 50K |
| 代理商： | W8NB80 |
STW8NB80
N - CHANNEL 800V - 1.2
- 7.5A - TO-247
PowerMESH
MOSFET
PRELIMINARY DATA
I
TYPICAL R
DS(on)
= 1.2
I
EXTREMELY HIGH dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
VERY LOW INTRINSIC CAPACITANCES
I
GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest R
DS(on)
per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
I
SWITCH MODE POWER SUPPLIES (SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
I
HIGH CURRENT, HIGH SPEED SWITCHING
INTERNAL SCHEMATIC DIAGRAM
January 1999
1
2
3
TO-247
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Parameter
Value
800
800
±
30
7.5
4.7
30
170
1.36
4
-65 to 150
150
Unit
V
V
V
A
A
A
W
W/
o
C
V/ns
o
C
o
C
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area (
1
) I
SD
≤ 7.5
A, di/dt
≤ 200 Α/μ
s, V
DD
≤
V
(BR)DSS
, Tj
≤
T
JMAX
dv/dt (
1
)
T
stg
T
j
TYPE
V
DSS
800 V
R
DS(on)
< 1.6
I
D
STW8NB80
7.5 A
1/5
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