- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄363908 > W971632AF (WINBOND ELECTRONICS CORP) 256K x 32 bit x 2 Banks SGRAM(256K x 32位 x 2組同步圖形RAM) PDF資料下載
參數(shù)資料
| 型號(hào)： | W971632AF |
| 廠商： | WINBOND ELECTRONICS CORP |
| 英文描述： | 256K x 32 bit x 2 Banks SGRAM(256K x 32位 x 2組同步圖形RAM) |
| 中文描述： | 256K × 32位× 2銀行SGRAM（256K × 32位× 2組同步圖形RAM）的 |
| 文件頁數(shù)： | 1/55頁 |
| 文件大小： | 2653K |
| 代理商： | W971632AF |
當(dāng)前第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁
W971632AF
256K x 32 bit x 2 Banks SGRAM
Revision 1.0 Publication Release Date: March, 1999
- 1 -
Features
JEDEC standard 3.3V power supply
Up to 143MHz clock frequency
262,144 words x 2 banks x 32 bits
1 Bank Select, Row Address A0~A9, Column Address A0~A7
CAS Latency: 2 and 3
Burst Length:1, 2, 4, 8 & full page
Burst Type: Sequential & Interleave
DQM 0-3 for byte masking
Auto & self refresh
Write Per Bit
8 columns Block Write
32ms refresh period, 2K cycle
LVTTL compatible interface
100 Pin PQFP, TQFP (14 x 20 mm)
General Description
W971632AF is a 16,777216-bit synchronous graphic memory organized as 262,144 words x 2 banks x 32 bits. Using
synchronous pipelined architecture, W971632AF delivers a data transmission rate of up to 143M words per second.
Accesses to the SGRAM are burst oriented. Consecutive memory location in one page can be accessed at a burst length of
1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE command. Column addresses are automatically generated
by the SGRAM internal counter in burst operation. Random column read is also possible by providing its address at each clock
cycle. The multiple bank nature enables interleaving among internal banks to hide the precharging time. Using a pogrammable
Mode Register, the system can change burst length, latency cycle, interleave or sequential burst to maximize its performance.
With write-per-bit and block-write functions, W971632AF is optimized for graphics drawing operation.
Key Parameters
Symbol
t
CK
Clock Cycle Time
t
AC
Access Time from CLK
t
RP
Precharge to Active Command
t
RCD
Active to Read/Write Command
I
CC1
Operation Current ( Single bank )
I
CC4
Burst Operation Current
I
CC6
Self-Refresh Current
Description
min/max
min
max
min
min
max
max
max
-7
7ns
6ns
21ns
21ns
90mA
165mA
1mA
-8
8ns
6.5ns
24ns
24ns
90mA
135mA
1mA
-10
10ns
7ns
30ns
30ns
70mA
115mA
1mA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| W981208AH | 4M x 8 bit x 4 Banks SDRAM |
| W981208BH | 4M x 4 BANKS x 8 BIT SDRAM |
| W981208AH-75 | x8 SDRAM |
| W981208AH-8H | x8 SDRAM |
| W981208BH-7 | x8 SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W971GG6JB | 制造商:WINBOND 制造商全稱:Winbond 功能描述:8M ? 8 BANKS ? 16 BIT DDR2 SDRAM |
| W971GG6JB-18 | 制造商:Winbond Electronics Corp 功能描述:1GB DDR2 制造商:Winbond Electronics Corp 功能描述:IC DDR2 SDRAM 1GBIT 1.875NS |
| W971GG6JB-25 | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR2 SDRAM 1G-Bit 64Mx16 1.8V 84-Pin WBGA 制造商:Winbond Electronics 功能描述:64MBX16 DDR2 制造商:Winbond 功能描述:DRAM Chip DDR2 SDRAM 1G-Bit 64Mx16 1.8V 84-Pin WBGA |
| W971GG6JB25I | 功能描述:IC DDR2 SDRAM 1GBIT 84WBGA RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:32K (4K x 8) 速度:100kHz，400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 125°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) 其它名稱:CAV24C32WE-GT3OSTR |
| W971GG6JB-25I | 制造商:Winbond Electronics 功能描述:-40~85 1GB DDR2 FOR INDUSTRY |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。