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參數(shù)資料
| 型號： | W981616AH-6 |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | DRAM |
| 英文描述： | x16 SDRAM |
| 中文描述： | 1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO50 |
| 封裝： | 0.400 INCH, TSOP2-50 |
| 文件頁數(shù)： | 1/40頁 |
| 文件大小： | 1015K |
| 代理商： | W981616AH-6 |
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W981616BH
512K
×
2 BANKS
×
16 BITS SDRAM
Publication Release Date: February 2000
- 1 -
Revision A2
GENERAL DESCRIPTION
W981616BH is a high-speed synchronous dynamic random access memory (SDRAM), organized as
512K words
×
2 banks
×
16 bits. Using pipelined architecture and 0.175
μ
m process technology,
W981616BH delivers a data bandwidth of up to 332M bytes per second (-5). For different applications
the W981616BH is sorted into the following speed grades: -5, -6, and –7(L).
Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be
accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE
command. Column addresses are automatically generated by the SDRAM internal counter in burst
operation. Random column read is also possible by providing its address at each clock cycle. The
multiple bank nature enables interleaving among internal banks to hide the precharging time.
By having a programmable Mode Register, the system can change burst length, latency cycle,
interleave or sequential burst to maximize its performance. W981616BH is ideal for main memory in
high performance applications.
FEATURES
3.3V ±0.3V power supply
Up to 166 MHz clock frequency
524,288 words x 2 banks x 16 bits organization
Auto Refresh and Self Refresh
CAS latency: 2 and 3
Burst Length: 1, 2, 4, 8, and full page
Burst read, Single Write Mode
Byte data controlled by UDQM and LDQM
Auto-precharge and controlled precharge
4K refresh cycles/64 mS
Interface: LVTTL
Packaged in 50-pin, 400 mil TSOP II
PIN CONFIGURATION
46
47
48
49
50
42
43
44
45
38
39
40
41
V
SS
1
2
3
4
5
DQ0
DQ1
6
7
8
9
10
11
12
13
CS
BA
NC
24
15
16
14
19
18
17
22
21
20
23
25
V
CC
V Q
DQ2
DQ3
V Q
CC
DQ4
DQ5
V Q
SS
DQ6
DQ7
V Q
CC
WE
CAS
RAS
LDQM
A1
A2
A3
A0
A10
V
CC
26
27
28
36
37
32
33
34
35
29
30
31
DQ15
DQ14
V Q
SS
DQ13
DQ12
V Q
CC
DQ11
DQ10
V Q
SS
DQ9
DQ8
V Q
CC
UDQM
NC
CLK
CKE
A9
A6
A5
A4
A7
A8
V
SS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| W981616AH-7 | x16 SDRAM |
| W981616AH-8 | x16 SDRAM |
| W9816G6BB | 512K x 2 BANKS x 16 BITS SDRAM |
| W9816G6BB-7 | 512K x 2 BANKS x 16 BITS SDRAM |
| W982516BH | 4M X 4 BANKS X 16 BIT SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W981616AH-7 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:x16 SDRAM |
| W981616AH-8 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:x16 SDRAM |
| W981616BH | 制造商:WINBOND 制造商全稱:Winbond 功能描述:512K ⅴ 2 BANKS ⅴ 16 BITS SDRAM |
| W981616BH-7 | 制造商:Winbond Electronics Corp 功能描述:SDRAM, 1M x 16, 50 Pin, Plastic, TSOP |
| W9816G6BB | 制造商:WINBOND 制造商全稱:Winbond 功能描述:512K x 2 BANKS x 16 BITS SDRAM |
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