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參數資料
| 型號： | W986416BH |
| 廠商： | WINBOND ELECTRONICS CORP |
| 英文描述： | 1M words x 16 bit x 4 Banks SDRAM(1M字 x 16 位 x 4 組同步動態RAM) |
| 中文描述： | 1M字× 16位× 4個銀行的SDRAM（100萬字× 16位× 4個組同步動態RAM）的 |
| 文件頁數： | 1/42頁 |
| 文件大小： | 2061K |
| 代理商： | W986416BH |
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W986416BH
1M x 16 bit x 4 Banks SDRAM
Revision 1.4 Publication Release Date: July, 1999
- 1 -
Features
3.3V
±
0.3V power supply
Up to 143Mhz clock frequency
1,048,576 words x 4 banks x 16 bits organization
Auto Refresh and Self Refresh
CAS latency: 2 and 3
Burst Length: 1, 2, 4, 8 , and full page
Sequential and Interleave burst
Burst read, Single Writes Mode
Byte data controlled by UDQM and LDQM
Power-Down Mode
Auto-Precharge and controlled precharge
4k refresh cycles / 64ms
Interface: LVTTL
Package: TSOP II 54 pin, 400 mil - 0.80
General Description
W986416BH is a high speed synchronous dynamic random access memory (SDRAM) , organized as 1M words x 4 banks x
16 bits. Using pipelined architecture and 0.25um process technology, W986416BH delivers a data bandwidth of up to 286M
bytes per second (-7). For different application, W986416BH is sorted into four speed grades: -7, -75, -8H, and -8N. The –7
parts can run up to 143Mhz/CL3, the -75 parts are compliant to the PC133/CL3 specification, the -8H parts are compliant to the
PC100/CL2 specification, and the -8N is compliant to PC100/CL3 specification.
Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be accessed at a burst length of
1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE command. Column addresses are automatically generated
by the SDRAM internal counrter in burst operation. Random column read is also possible by providing its address at each clock
cycle. The multiple bank nature enables interleaving among internal banks to hide the precharging time.
By having a programmable Mode Register, the system can change burst length, latency cycle, interleave or sequential burst
to maximize its performance. W986416BH is ideal for main memory in high performance applications.
Key Parameters
Symbol
Description
min/max
t
CK
Clock Cycle Time
Min
t
AC
Access Time from CLK
Max
t
RP
Precharge to Active Command
Min
t
RCD
Active to Read/Write Command
Min
I
CC1
Operation Current ( Single bank )
Max
I
CC4
Burst Operation Current
Max
I
CC6
Self-Refresh Current
Max
-7
7ns
5.4ns
20ns
20ns
90mA
140mA
1mA
-75 (PC133) -8H(PC100)
7.5ns
5.4ns
20ns
20ns
90mA
140mA
1mA
-8N(PC100)
10ns
6ns
20ns
20ns
90mA
140mA
1mA
8ns
6ns
20ns
20ns
90mA
140mA
1mA
相關PDF資料 |
PDF描述 |
|---|---|
| W986416DH | 1M X 4 BANKS X 16 BITS SDRAM |
| W986416CH | 1M x 16 BIT x 4 BANKS SDRAM |
| W986416CH-6 | x16 SDRAM |
| W986416CH-7 | x16 SDRAM |
| W986416CH-75 | x16 SDRAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| W986416CH | 制造商:WINBOND 制造商全稱:Winbond 功能描述:1M x 16 BIT x 4 BANKS SDRAM |
| W986416CH-6 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:x16 SDRAM |
| W986416CH-7 | 制造商:Winbond Electronics Corp 功能描述:SDRAM, 4M x 16, 54 Pin, Plastic, TSOP |
| W986416CH-75 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:x16 SDRAM |
| W986416CH-8H | 制造商:WINBOND 制造商全稱:Winbond 功能描述:x16 SDRAM |
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