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參數資料
型號: W986432DH
廠商: WINBOND ELECTRONICS CORP
英文描述: 512K ⅴ 4 BANKS ⅴ 32 BITS SDRAM
中文描述: 4銀行為512kⅴⅴ32位內存
文件頁數: 1/11頁
文件大小: 79K
代理商: W986432DH
PRELIMINARY W986432DH
512K
×
4 BANKS
×
32 BITS SDRAM
Publication Release Date: May 2000
- 1 -
Revision A0
GENERAL DESCRIPTION
W986432DH is a high-speed synchronous dynamic random access memory (SDRAM), organized as
512K words
×
4 banks
×
32 bits. Using pipelined architecture and 0.175
μ
m process technology,
W986432DH delivers a data bandwidth of up to 800M bytes per second (5). For different application,
W986432DH is sorted into four speed grades: -5, -55, -6, -7,-8.
Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be
accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE
command. Column addresses are automatically generated by the SDRAM internal counter in burst
operation. Random column read is also possible by providing its address at each clock cycle. The
multiple bank nature enables interleaving among internal banks to hide the precharging time.
By having a programmable Mode Register, the system can change burst length, latency cycle,
interleave or sequential burst to maximize its performance. W986432DH is ideal for main memory in
high performance applications.
FEATURES
3.3V ±0.3V power supply
524288 words
×
4 banks
×
32 bits organization
Auto Refresh and Self Refresh
CAS latency: 2 and 3
Burst Length: 1, 2, 4, 8, and full page
Sequential and Interleave burst
Burst read, single write operation
Byte data controlled by DQM
Power-down Mode
Auto-precharge and controlled precharge
4K refresh cycles/64 mS
Interface: LVTTL
Packaged in 86-pin TSOP II, 400 mil - 0.50
相關PDF資料
PDF描述
W986432AH 512K x 4 BANKS x 32 BITS SDRAM
W986432AH-55 x32 SDRAM
W986432AH-6 x32 SDRAM
W986432AH-7 x32 SDRAM
W986432AH-8 x32 SDRAM
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W986432DH-7L 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SDRAM|4X512KX32|CMOS|TSSOP|86PIN|PLASTIC
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