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參數資料
| 型號： | WED2DL32512V40BI |
| 英文描述： | SYNC SRAM|512KX32|CMOS|BGA|119PIN|PLASTIC |
| 中文描述： | 同步靜態存儲器| 512KX32 |的CMOS | BGA封裝| 119PIN |塑料 |
| 文件頁數： | 1/9頁 |
| 文件大?。?/td> | 353K |
| 代理商： | WED2DL32512V40BI |
1
White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com
WED2DG472512V-D2
January 2000 Rev 0
ADVANCED*
DESCRIPTION
The WED2DG472512V is a Synchronous/Synchronous Burst SRAM,
84 position Dual Key; Double High DIMM (168 contacts) Module,
organized as 4x512Kx72. The Module contains sixteeen (16) Syn-
chronous Burst RAM devices, packaged in the industry standard
JEDEC 14mmx20mm TQFP placed on a Multilayer FR4 Substrate.
The Module Architecture is defined as a Sync/SyncBurst, Pipe-
line, with support for either linear or sequential burst. This
Module provides high performance, 3-1-1-1 accesses when used
in Burst Mode, and when used in Synchronous Only Mode, pro-
vides a high performance, data access every second cycle.
Synchronous Only operations are performed via strapping ADSC
Low, and ADSP/ADV High, which provides for Ultra Fast Accesses
in Read Mode while providing for internally self-timed Early
Writes.
Synchronous/Synchronous Burst operations are in relation to an
externally supplied clock, Registered Address, Registered Global
Write, Registered Enables as well as an Asynchronous Output
Enable. This Module has been defined with full flexibility, which
allows individual control of each of the eight bytes, as well as
Quad Words in both Read and Write Operations.
16MB (4x512Kx72) SYNC BURST-
PIPELINE, DUAL KEY DIMM
* This data sheet describes a product that may or may not be under
development and s subject o change or cancellation without notice.
FIG. 1
PIN IDENTIFIER
PIN CONFIGURATION
V
SS
A
0
A
16
A
2
A
14
V
CC
A
4
A
12
A
6
A
10
V
SS
A
8
RFU
E
4
E
2
V
SS
MODE
EM
GW
RFU
V
CC
BW
4
BW
3
BW
8
BW
7
ADSC
ADSP
V
SS
NC
V
CC
DQ
0
DQ
1
DQ
2
DQ
3
V
SS
ZZ
1
V
CC
DQ
8
DQ
9
DQ
10
DQ
11
V
SS
V
SS
A
17
A
1
A
15
A
3
V
CC
A
13
A
5
A
11
A
7
V
SS
A
9
A
18
E
1
E
3
V
SS
CLK
V
SS
G
BWE
V
CC
BW
2
BW
1
BW
6
BW
5
V
SS
ADV
V
SS
DQP
0
V
CC
DQ
7
DQ
6
DQ
5
DQ
4
V
SS
DQP
1
V
CC
DQ
15
DQ
14
DQ
13
DQ
12
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
101
102
103
104
105
106
107
108
109
110
111
112
113
114
115
116
117
118
119
120
121
122
123
124
125
126
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
127
128
129
130
131
132
133
134
135
136
137
138
139
140
141
142
143
144
145
146
147
148
149
150
151
152
153
154
155
156
157
158
159
160
161
162
163
164
165
166
167
168
NC
V
CC
DQ
16
DQ
17
DQ
18
DQ
19
V
SS
ZZ
2
V
CC
DQ
24
DQ
25
DQ
26
DQ
27
V
SS
NC
V
CC
DQ
32
DQ
33
DQ
34
DQ
35
V
SS
ZZ
3
V
CC
DQ
40
DQ
41
DQ
42
DQ
43
V
SS
NC
V
CC
DQ
48
DQ
49
DQ
50
DQ
51
V
SS
ZZ
4
V
CC
DQ
56
DQ
57
DQ
58
DQ
59
V
SS
DQP
2
V
CC
DQ
23
DQ
22
DQ
21
DQ
20
V
SS
DQP
3
V
CC
DQ
31
DQ
30
DQ
29
DQ
28
V
SS
DQP
4
V
CC
DQ
39
DQ
38
DQ
37
DQ
36
V
SS
DQP
5
V
CC
DQ
47
DQ
46
DQ
45
DQ
44
V
SS
DQP
6
V
CC
DQ
55
DQ
54
DQ
53
DQ
52
V
SS
DQP
7
V
CC
DQ
63
DQ
62
DQ
61
DQ
60
V
SS
FEATURES
I
4x512Kx72 Synchronous, Synchronous Burst
I
Pipeline Architecture; Single Cycle Deselect
I
Linear and Sequential Burst Support via MODE pin
I
Clock Controlled Registered Module Enable (EM)
I
Clock Controlled Registered Bank Enables (E
1
, E
2
, E
3
, E
4
)
I
Clock Controlled Byte Write Mode Enable (BWE)
I
Clock Controlled Byte Write Enables (BW
1
- BW
8
)
I
Clock Controlled Registered Address
I
Clock Controlled Registered Global Write (GW)
I
Asynchronous Output Enable (G)
I
Internally Self-Timed Write
I
Individual Bank Sleep Mode Enables (ZZ
1
, ZZ
2
, ZZ
3
, ZZ
4
)
I
Gold Lead Finish
I
3.3V
±
10% Operation
I
Frequency(s): 200, 166, 150, and 133MHz
I
Access Speed(s): t
KHQV
= 3.0, 3.5, 3.7, and 4.0ns
I
Common Data I/O
I
High Capacitance (30pF) Drive, at Rated Access Speed
I
Single Total Array Clock
I
Multiple V
cc
and G
nd
for Improved Noise Immunity
PIN DESCRIPTION
DQ
0
- DQ
63
DQP
0
- DQP
7
A
0
- A
18
EM
E
1
, E
2
, E
3
, E
4
BWE
BW
1
- BW
8
CLK
GW
G
ZZ
1
, ZZ
2
, ZZ
3
, ZZ
4
Vcc
Vss
Input/Output Bus
Parity Bits
Address Bus
Module Enable
Synchronous Bank Enables
Byte Write Mode Enable
Byte Write Enables
Array Clock
Synchronous Global Write Enable
Asynchronous Output Enable
Bank Sleep Mode Enables
3.3V Power Supply
Ground
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相關代理商/技術參數 |
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| WED2DL32512V-B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SSRAM MCP |
| WED2DL32512V-BC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TMS320C6202. TMS320C6203. TMS320C6204. TMS320C6 Families |
| WED2DL36513V-B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SSRAM MCP |
| WED2EG472512V5D2 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:16MB (4x512Kx72) SYNC BURST PIPELINE, DUAL KEY DIMM |
| WED2EG472512V65D2 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:16MB (4x512Kx72) SYNC BURST PIPELINE, DUAL KEY DIMM |
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