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參數資料
型號: WED9LC6816V-BC
英文描述: SSRAM/SDRAM MCP
中文描述: 的SSRAM / SDRAM的MCP的
文件頁數: 1/27頁
文件大小: 334K
代理商: WED9LC6816V-BC
White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com
White Electronic Designs
October 2001, Rev. 1
ECO # 14663
Clock speeds:
SSRAM: 200, 166, 150, and 133 MHz
SDRAMs: 125 and 100 MHz
DSP Memory Solution
Texas Instruments TMS320C6201
Texas Instruments TMS320C6701
Packaging:
153 pin BGA, JEDEC MO-163
3.3V Operating supply voltage
Direct control interface to both the SSRAM and SDRAM
ports on the “C6x”
Common address and databus
65% space savings vs. monolithic solution
Reduced system inductance and capacitance
The WED9LC6416VxxBC is a 3.3V, 128K x 32 Synchronous
Pipeline SRAM and a 4M x 32 Synchronous DRAM array
constructed with one 128K x 32 SSRAM and two 4M x 16
SDRAM die mounted on a multilayer laminate substrate. The
device is packaged in a 153 lead, 14mm by 22mm BGA.
The WED9LC6416VxxBC provides a total memory solution
for the Texas Instruments TMS320C6201 and the
TMS320C6701 DSPs.
The Synchronous Pipeline SSRAM is available with clock
speeds of 200, 166, 150, and 133 MHz, allowing the user to
develop a fast external memory for the SSRAM interface port.
The SDRAM is available in clock speeds of 125 and 100
MHz, allowing the user to develop a fast external memory
for the SDRAM interface port.
The WED9LC6416V is available in both commercial and in-
dustrial temperature ranges.
DQ
19
DQ
23
V
CC
V
SS
V
SS
V
SS
V
CC
DQ
24
DQ
28
DQ
18
DQ
22
V
CC
V
SS
SDCE
V
SS
V
SS
DQ
25
DQ
29
V
CCQ
V
CCQ
V
CC
SDWE SDA
10
NC
V
CC
V
CCQ
V
CCQ
DQ
17
DQ
21
V
CC
V
SS
V
SS
V
SS
V
CC
DQ
26
DQ
30
DQ
16
DQ
20
V
CC
V
SS
SDCLK V
SS
V
CC
DQ
27
DQ
31
V
CCQ
V
CCQ
V
CC
V
SS
V
SS
V
SS
V
CC
V
CCQ
V
CCQ
NC
NC
NC
SDRAS SDCAS V
SS
A
2
A
4
A
5
NC
NC
A
8
V
SS
V
SS
NC
A
1
A
3
A
10
A
6
A
7
A
9
V
SS
V
SS
NC
A
0
A
11
A
12
NC/A
17
NC/A
18
NC/A
19
V
SS
V
SS
NC
NC
A
13
A
14
NC
NC
NC
BWE
2
BWE
3
NC
NC
A
15
A
16
V
CCQ
V
CCQ
VCC
BWE
0
BWE
1
NC
V
CC
V
CCQ
V
CCQ
DQ
12
DQ
11
V
CC
V
SS
V
SS
V
SS
V
CC
DQ
4
DQ
0
DQ
13
DQ
10
V
CC
V
SS
SSCLK
V
SS
V
CC
DQ
5
DQ
1
V
CCQ
V
CCQ
V
CC
V
SS
V
SS
V
SS
V
CC
V
CCQ
V
CCQ
DQ
14
DQ
9
V
CC
SSADC SSWE
NC
V
CC
DQ
6
DQ
2
DQ
15
DQ
8
V
CC
SSOE
SSCE
NC
V
CC
DQ
7
DQ
3
A
0-16
DQ
0-31
SSCLK
SSADC
SSWE
SSOE
SDCLK
SDRAS
SDCAS
SDWE
SDA
10
BWE
0-3
Address Bus
Data Bus
SSRAM Clock
SSRAM Address Status Control
SSRAM Write Enable
SSRAM Output Enable
SDRAM Clock
SDRAM Row Address Strobe
SDRAM Column Address Strobe
SDRAM Write Enable
SDRAM Address 10/auto precharge
SSRAM Byte Write Enables
SDRAM SDQM 0 -3
Chip Enable SSRAM Device
Chip Enable SDRAM Device
Power Supply pins,3.3V
Data Bus Power Supply pins,
3.3V (2.5V future)
Ground
No Connect
Future Depth Expansion
SSCE
SDCE
V
CC
V
CCQ
Vss
NC
NC/A
NX
相關PDF資料
PDF描述
WED9LC6416V 128Kx32 SSRAM/4Mx32 SDRAM Array(128Kx32同步靜態RAM和4Mx32同步動態RAM陣列)
WED9LC6416V1512BC 128Kx32 SSRAM/4Mx32 SDRAM
WED9LC6416V1512BI 128Kx32 SSRAM/4Mx32 SDRAM
WED9LC6416V1610BC 128Kx32 SSRAM/4Mx32 SDRAM
WED9LC6416V1610BI 128Kx32 SSRAM/4Mx32 SDRAM
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