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參數資料
型號: WEDPZ512K72V-100BC
廠商: WHITE ELECTRONIC DESIGNS CORP
元件分類: SRAM
英文描述: 512K X 72 ZBT SRAM, 5 ns, PBGA152
封裝: 17 X 23 MM, PLASTIC, BGA-152
文件頁數: 1/15頁
文件大小: 0K
代理商: WEDPZ512K72V-100BC
1
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
WEDPZ512K72V-XBX
February 2009
Rev. 9
FEATURES
Fast clock speed: 150, 133, and 100MHz
Fast access times: 3.8ns, 4.2ns, and 5.0ns
Fast OE# access times: 3.8ns, 4.2ns, and 5.0ns
High performance 3-1-1-1 access rate
3.3V ± 5% power supply
I/O supply voltage 3.3V or 2.5V
Common data inputs and data outputs
Byte write enable and global write control
Six chip enables for depth expansion and
address pipeline
Internally self-timed write cycle
Burst control pin (interleaved or linear burst
sequence)
Automatic power-down for portable applications
Commercial, industrial and military temperature
ranges
Packaging:
152 PBGA package 17 x 23mm
BENEFITS
30% space savings compared to equivalent
TQFP solution
Reduced part count
24% I/O reduction
Laminate interposer for optimum TCE match
Low Prole
Reduce layer count for board routing
Suitable for hi-reliability applications
User congurable as 1M x 36 or 2M x 18
Upgradable to 1M x 72 (contact factory for availability)
512K x 72 Synchronous Pipeline Burst ZBL SRAM
FUNCTIONAL BLOCK DIAGRAM
DESCRIPTION
The WEDC SyncBurst - SRAM employs high-speed,
low-power CMOS design that is fabricated using an
advanced CMOS process. WEDC’s 32Mb SyncBurst
SRAMs integrate two 512K x 36 SSRAMs into a single
BGA package to provide 512K x 72 conguration. All
synchronous inputs pass through registers controlled by a
positive-edge-triggered single-clock input (CLK). The ZBL
or Zero Bus Latency Memory utilizes all the bandwidth
in any combination of operating cycles. Address, data
inputs, and all control signals except output enable and
linear burst order are synchronized to input clock. Burst
order control must be tied “High or Low.” Asynchronous
inputs include the sleep mode enable (ZZ). Output Enable
controls the outputs at any given time. Write cycles are
internally self-timed and initiated by the rising edge of the
clock input. This feature eliminates complex off-chip write
pulse generation and provides increased timing exibility
for incoming signals.
* Product is subject to change without notice.
A0-18
BWa#
BWb#
BWc#
BWd#
WE0#
OE0#
CLK0
CKE0#
CS10#
CS20#
CS20
ADV0
LBO#
ZZ
SA
BWa#
BWb#
BWc#
BWd#
WE0#
OE0#
CLK
CKE#
CS1#
CS2#
CS2
ADV
LBO#
ZZ
DQPA
DQA0-7
DQPB
DQB0-7
DQPC
DQC0-7
DQPD
DQD0-7
DQPA
DQA0-7
DQPB
DQB0-7
DQPC
DQC0-7
DQPD
DQD0-7
512K x 36 SSRAM
BWe#
BWf#
BWg#
BWh#
WE1#
OE1#
CLK1#
CKE1#
CS11#
CS21#
CS21
ADV1
SA
BWa#
BWb#
BWc#
BWd#
WEO#
OEO#
CLK
CKE
CS1#
CS2#
CS2
ADV
LBO#
ZZ
512K x 36 SSRAM
DQPA
DQA0-7
DQPB
DQB0-7
DQPC
DQC0-7
DQPH
DQD0-7
DQPE
DQE0-7
DQPF
DQF0-7
DQPG
DQG0-7
DQPH
DQH0-7
相關PDF資料
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相關代理商/技術參數
參數描述
WEDPZ512K72V-100BI 制造商:Microsemi Corporation 功能描述:512K X 72 ZBL SSRAM MODULE, 3.3V, 100MHZ, 152 BGA 17MM X 23M - Bulk
WEDPZ512K72V-100BM 制造商:Microsemi Corporation 功能描述:512K X 72 ZBL SSRAM MODULE, 3.3V, 100MHZ, 152 BGA 17MM X 23M - Bulk
WEDPZ512K72V-133BC 制造商:Microsemi Corporation 功能描述:512K X 72 ZBL SSRAM MODULE, 3.3V, 133MHZ, 152 BGA 17MM X 23M - Bulk
WEDPZ512K72V-133BI 制造商:Microsemi Corporation 功能描述:512K X 72 ZBL SSRAM MODULE, 3.3V, 133MHZ, 152 BGA 17MM X 23M - Bulk
WEDPZ512K72V-133BM 制造商:Microsemi Corporation 功能描述:512K X 72 ZBL SSRAM MODULE, 3.3V, 133MHZ, 152 BGA 17MM X 23M - Bulk
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