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參數資料
| 型號： | WFD2N60 |
| 廠商： | Wisdom Semiconductor Inc. |
| 英文描述： | N-Channel MOSFET |
| 中文描述： | N溝道MOSFET |
| 文件頁數： | 1/8頁 |
| 文件大小： | 721K |
| 代理商： | WFD2N60 |
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Absolute Maximum Ratings
Symbol
Parameter
Value
Units
V
DSS
Drain to Source Voltage
600
V
I
D
Continuous Drain Current(@T
C
= 25
°C)
1.8
A
Continuous Drain Current(@T
C
= 100
°C)
1.1
A
I
DM
Drain Current Pulsed
(Note 1)
6.0
±
30
A
V
GS
Gate to Source Voltage
V
E
AS
E
AR
dv/dt
Single Pulsed Avalanche Energy
(Note 2)
120
mJ
Repetitive Avalanche Energy
(Note 1)
4.4
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Total Power Dissipation(@T
C
= 25 °C)
44
W
Derating Factor above 25 °C
0.35
W/°C
T
STG,
T
J
Operating Junction Temperature & Storage Temperature
- 55 ~ 150
°C
T
L
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
300
°C
Thermal Characteristics
Symbol
Parameter
Value
Typ.
Units
Min.
Max.
R
θ
JC
R
θ
JA
R
θ
JA
Thermal Resistance, Junction-to-Case
-
-
2.87
°C/W
Thermal Resistance, Junction-to-Ambient*
-
-
50
°C/W
Thermal Resistance, Junction-to-Ambient
-
-
110
°C/W
WFD/U2N60
Features
■
R
DS(on)
(Max 5.0
)@V
GS
=10V
■
Gate Charge
(Typical 9.5nC)
■
Improved dv/dt Capability, High Ruggedness
■
100% Avalanche Tested
■
Maximum Junction Temperature Range
(150°C)
General Description
This Power MOSFET is produced using Wisdom’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switch mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge topology.
N-Channel MOSFET
Wisdom
Semiconductor
Copyright@Wisdom Semiconductor Inc., All rights reserved.
Symbol
2. Drain
3. Source
1. Gate
D-PAK, I-PAK
123
1
2
3
* When mounted on the minimum pad size recommended (PCB Mount)
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