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參數資料
| 型號： | WMS512K8V-20CC |
| 廠商： | Electronic Theatre Controls, Inc. |
| 元件分類： | SRAM |
| 英文描述： | 512Kx8 MONOLITHIC SRAM |
| 中文描述： | 512Kx8整裝靜態存儲器 |
| 文件頁數： | 1/9頁 |
| 文件大小： | 103K |
| 代理商： | WMS512K8V-20CC |
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White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
HI-RELIABILITY PRODUCT
WMS512K8V-XXX
512Kx8 MONOLITHIC SRAM PRELIMINARY*
FEATURES
s Access Times 15, 17, 20ns
s Revolutionary, Center Power/Ground Pinout
JEDEC Approved
36 lead Ceramic SOJ (Package 100)
36 lead Ceramic Flat Pack (Package 226)
s Evolutionary, Corner Power/Ground Pinout
JEDEC Approved
32 pin Ceramic DIP (Package 300)
32 lead Ceramic SOJ (Package 101)**
32 lead Ceramic Flat Pack (Package 220)**
s 32 pin, Rectangular Ceramic Leadless Chip Carrier
(Package 601)
s Low Power CMOS
s Low Voltage Operation:
3.3V
± 10% Power Supply
s Commercial, Industrial and Military Temperature Range
s TTL Compatible Inputs and Outputs
s Fully Static Operation:
No clock or refresh required.
s Three State Output.
* This data sheet describes a product that is not fully qualified or
characterized and is subject to change without notice.
** Package under developement.
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A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
VCC
A15
A17
WE
A13
A8
A9
A11
OE
A10
CS
I/O7
I/O6
I/O5
I/O4
I/O3
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A0
A1
A2
A3
A4
CS
I/O0
I/O1
VCC
GND
I/O2
I/O3
WE
A5
A6
A7
A8
A9
NC
A18
A17
A16
A15
OE
I/O7
I/O6
GND
VCC
I/O5
I/O4
A14
A13
A12
A11
A10
NC
A0-18
Address Inputs
I/O0-7
Data Input/Output
CS
Chip Select
OE
Output Enable
WE
Write Enable
VCC
Power Supply
GND
Ground
PIN DESCRIPTION
April 2001 Rev. 6
REVOLUTIONARY PINOUT
EVOLUTIONARY PINOUT
32 DIP
32 CSOJ (DE)**
32 FLAT PACK (FE)**
TOP VIEW
36 FLAT PACK
36 CSOJ
TOP VIEW
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A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
V
SS
I/O3
I/O4
I/O5
I/O6
WE
A13
A8
A9
A11
OE
A10
CS
I/O7
A12
A14
A16
A18
V
CC
A15
A17
TOP VIEW
32 CLCC
相關PDF資料 |
PDF描述 |
|---|---|
| WMS512K8V-20CI | Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 240pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-1%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 1206; Termination: 100% Tin (Sn); Body Dimensions: 0.125" x 0.062" x 0.051"; Container: Bag; Features: MIL-PRF-55681: S Failure Rate |
| WMS512K8V-20CLC | 512Kx8 MONOLITHIC SRAM |
| WMS512K8V-20CLI | 512Kx8 MONOLITHIC SRAM |
| WMS512K8V-20CLIA | 512Kx8 MONOLITHIC SRAM |
| WMS512K8V-20CLM | 512Kx8 MONOLITHIC SRAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| WMS512K8V-20CI | 制造商:Microsemi Corporation 功能描述:512K X 8 SRAM MONOLITHIC, 3.3V, 20NS, 32DIP, INDUSTRIAL SCRE - Bulk |
| WMS512K8V-20CM | 制造商:Microsemi Corporation 功能描述:512K X 8 SRAM MONOLITHIC, 3.3V, 20NS, 32DIP, MIL-SCREENED - Bulk |
| WMS512K8V-20DEC | 制造商:Microsemi Corporation 功能描述:512K X 8 SRAM MONOLITHIC, 3.3V, 20NS, 32 CSOJ EVOL., COMMERC - Bulk |
| WMS512K8V-20DEI | 制造商:Microsemi Corporation 功能描述:512K X 8 SRAM MONOLITHIC, 3.3V, 20NS, 32 CSOJ EVOL., INDUSTR - Bulk |
| WMS512K8V-20DEM | 制造商:Microsemi Corporation 功能描述:512K X 8 SRAM MONOLITHIC, 3.3V, 20NS, 32 CSOJ EVOL., MIL-SCR - Bulk |
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