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參數資料
型號: WPS512K8T-20RJIGA
廠商: MICROSEMI CORP-PMG MICROELECTRONICS
元件分類: SRAM
英文描述: 512K X 8 STANDARD SRAM, 20 ns, PDSO36
封裝: ROHS COMPLIANT, PLASTIC, REVOLUTIONARY, SOJ-36
文件頁數: 1/9頁
文件大小: 798K
代理商: WPS512K8T-20RJIGA
February 2011
2011 Microsemi Corporation. All rights reserved.
1
Microsemi Corporation (602) 437-1520 www.whiteedc.com
Rev. 10
www.microsemi.com
Microsemi Corporation reserves the right to change products or specications without notice.
EDI88512CA-XMXG
WPS512K8X-XRJXG
A0
A1
A2
A3
A4
CS#
I/O0
I/O1
VCC
VSS
I/O2
I/O3
WE#
A5
A6
A7
A8
A9
36pin
Revolutionary
NC
A18
A17
A16
A15
OE#
I/O7
I/O6
VSS
VCC
I/O5
I/O4
A14
A13
A12
A11
A10
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
512Kx8 Plastic Monolithic SRAM CMOS
FEATURES
512Kx8 bit CMOS Static
Random Access Memory
Access Times of 17, 20, 25ns
Data Retention Function (LPA version)
Extended Temperature Testing
Data Retention Functionality Testing
36 lead JEDEC Approved Revolutionary Pinout
Plastic SOJ (Package 319)
Single +5V (±10%) Supply Operation
RoHS compliant
WEDC's ruggedized plastic 512Kx8 SRAM that allows the user to
capitalize on the cost advantage of using a plastic component while
not sacricing all of the reliability available in a full military device.
Extended temperature testing is performed with the test patterns
developed for use on WEDC’s fully compliant 512Kx8 SRAMs.
WEDC fully characterizes devices to determine the proper test
patterns for testing at temperature extremes. This is critical because
the operating characteristics of device change when it is operated
beyond the commercial guarantee a device that operates reliably
in the eld at temperature extremes. Users of WEDC’s ruggedized
plastic benet from WEDC’s extensive experience in characterizing
SRAMs for use in military systems.
WEDC ensures Low Power devices will retain data in Data
Retention mode by characterizing the devices to determine the
appropriate test conditions. This is crucial for systems operating
at -40°C or below and using dense memories such as 512Kx8s.
WEDC’s ruggedized plastic SOJ is footprint compatible with
WEDC’s full military ceramic 36 pin SOJ.
TOP VIEW
PIN Description
I/O0-7
Data Inputs/Outputs
A0-18
Address Inputs
WE#
Write Enables
CS#
Chip Selects
OE#
Output Enable
VCC
Power (+5V ±10%)
VSS
Ground
NC
Not Connected
BLOCK DIAGRAM
WE#
CS#
OE#
Memory Array
Address
Buffer
Address
Decoder
I/O
Circuits
A-18
I/O-7
FIGURE 1 – PIN CONFIGURATION
相關PDF資料
PDF描述
WS57C010F-45LI 128K X 8 UVPROM, 45 ns, CQCC32
WMS512K8-17FEC 512K X 8 STANDARD SRAM, 17 ns, CDFP32
WMS512K8L-15DEMA 512K X 8 STANDARD SRAM, 15 ns, CDSO32
WMS512K8L-55DECA 512K X 8 STANDARD SRAM, 55 ns, CDSO32
WMS512K8L-45CLI 512K X 8 STANDARD SRAM, 45 ns, CQCC32
相關代理商/技術參數
參數描述
WPS512K8T-20RJM 制造商:Microsemi Corporation 功能描述:512K X 8 SRAM MONOLITHIC, 5V, 20NS, 36 SOJ (PLASTIC), TEMP C - Bulk
WPS512K8T-25RJI 制造商:Microsemi Corporation 功能描述:512K X 8 SRAM MONOLITHIC, 5V, 25NS, 36 SOJ (PLASTIC), TEMP C - Bulk
WPS512K8T-25RJM 制造商:Microsemi Corporation 功能描述:512K X 8 SRAM MONOLITHIC, 5V, 25NS, 36 SOJ (PLASTIC), TEMP C - Bulk
WPS512K8T-XXXRJI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:512Kx8 SRAM
WPS512K8T-XXXRJIB 制造商:未知廠家 制造商全稱:未知廠家 功能描述:512Kx8 SRAM
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