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參數資料
| 型號： | WS128K32-35G2TMEA |
| 元件分類： | SRAM |
| 英文描述： | 128K X 32 MULTI DEVICE SRAM MODULE, 35 ns, CQFP68 |
| 封裝： | 22.40 MM, CERAMIC, QFP-68 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 0K |
| 代理商： | WS128K32-35G2TMEA |
1
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
HI-RELIABILITY PRODUCT
WS128K32-XG2TXE
128Kx32 SRAM MULTICHIP PACKAGE, RADIATION TOLERANT ADVANCED*
s 5 Volt Power Supply
s Low Power CMOS
s TTL Compatible Inputs and Outputs
s Built in Decoupling Caps and Multiple Ground Pins for
Low Noise Operation
s Weight:
WS128K32-XG2TXE - 8 grams typical
s Radiation tolerant with epitaxial layer on die.
s 6T memory cells provide excellent protection against
soft errors
*
This data sheet describes a product that may or may not be under
development and is subject to change or cancellation without notice.
FEATURES
s Access Times of 35, 45, 55ns
s Packaging
68 lead, 22.4mm CQFP (G2T), 4.57mm (0.180"),
(Package 509)
s Organized as 128Kx32; User Configurable as 256Kx16
or 512Kx8
s Low Power Data Retention
s Commercial, Industrial and Military Temperature
Ranges
December 2000 Rev. 0
128K x 8
8
I/O 0-7
CS1
128K x 8
8
I/O 8-15
2
128K x 8
8
I/O 16-23
3
128K x 8
8
I/O 24-31
4
A 0-16
OE
WE
CS
WE
CS
WE
CS
WE
12
3
4
BLOCK DIAGRAM
FIG. 1 PIN CONFIGURATION FOR WS128K32-XG2TXE
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
GND
I/O8
I/O9
I/O10
I/O11
I/O12
I/O13
I/O14
I/O15
V
CC
A
11
A
12
A
13
A
14
A
15
A
16
CS
1
OE
CS
2
NC
WE
2
WE
3
WE
4
NC
I/O16
I/O17
I/O18
I/O19
I/O20
I/O21
I/O22
I/O23
GND
I/O24
I/O25
I/O26
I/O27
I/O28
I/O29
I/O30
I/O31
NC
A
0
A
1
A
2
A
3
A
4
A
5
CS
3
GND
CS
4
WE
1
A
6
A
7
A
8
A
9
A
10
V
CC
TOP VIEW
The WEDC 68 lead G2T CQFP
fills the same fit and function
as the JEDEC 68 lead CQFJ or
68 PLCC. But the G2T has the
TCE and lead inspection
advantage of the CQFP form.
PIN DESCRIPTION
I/O0-31
Data Inputs/Outputs
A0-16
Address Inputs
WE1-4
Write Enables
CS1-4
Chip Selects
OE
Output Enable
VCC
Power Supply
GND
Ground
NC
Not Connected
0.940"
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| WS128K32-55G2TIE | 128K X 32 MULTI DEVICE SRAM MODULE, 55 ns, CQFP68 |
| WS128K32-35G2TIE | 128K X 32 MULTI DEVICE SRAM MODULE, 35 ns, CQFP68 |
| WS128K32-45G2TIE | 128K X 32 MULTI DEVICE SRAM MODULE, 45 ns, CQFP68 |
| WS512K32-120CJC | 512K X 8 MULTI DEVICE SRAM MODULE, 120 ns, CQCC68 |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| WS128K32-35G2TQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 SRAM Module |
| WS128K32-35G2UC | 制造商:Microsemi Corporation 功能描述:128K X 32 SRAM MODULE, 5V, 35NS, 68 CQFP 0.88" SQ., 0.140" H - Bulk |
| WS128K32-35G2UI | 制造商:Microsemi Corporation 功能描述:128K X 32 SRAM MODULE, 5V, 35NS, 68 CQFP 0.88" SQ., 0.140" H - Bulk |
| WS128K32-35G2UM | 制造商:Microsemi Corporation 功能描述:128K X 32 SRAM MODULE, 5V, 35NS, 68 CQFP 0.88" SQ., 0.140" H - Bulk |
| WS128K32-35G4I | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 SRAM Module |
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