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參數資料
| 型號： | WS512K32BV-XXXE |
| 英文描述： | 512Kx32 3.3V SRAM MODULE |
| 中文描述： | 512Kx32 3.3V的靜態存儲器模塊 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 342K |
| 代理商： | WS512K32BV-XXXE |
WS512K32BV-XXXE
1
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
December, 1999
Rev. 2
*ADVANCED
NOTRECOMENDEDFORNEWDESGNS
A
16
A
12
WE#
1
A
8
A
5
A
2
I/O
8
I/O
9
I/O
10
A
13
A
14
A
15
A
17
I/O
0
I/O
1
I/O
2
WE#
2
CS#
2
GND
I/O
11
A
10
A
11
V
CC
CS#
1
NC
I/O
3
I/O
15
I/O
14
I/O
13
I/O
12
OE#
A
18
I/O
7
I/O
6
I/O
5
I/O
4
I/O
24
I/O
25
I/O
26
A
6
A
7
NC
A
9
I/O
16
I/O
17
I/O
18
V
CC
CS#
4
WE#
4
I/O
27
A
3
A
4
WE#
3
CS#
3
GND
I/O
19
I/O
31
I/O
30
I/O
29
I/O
28
A
0
A
1
I/O
23
I/O
22
I/O
21
I/O
20
11 22 33 44 55 66
1 12 23 34 45 56
512Kx32 3.3V SRAM MODULE
FEATURES
■
Access Times of 15*, 17, 20ns
■
Low Voltage Operation
■
Packaging
66-pin, PGA Type, 1.385 inch square Hermetic
Ceramic HIP (Package 402)
68 lead, Hermetic CQFP (G2), 22mm (0.880
inch) square (Package 500). Designed to fit
■
Organized as 512Kx32; User Configurable as
1Mx16 or 2Mx8
■
Radiation Tolerant with Epitaxial Layer Die
■
Commercial and Industrial Temperature Ranges
■
■
■
■
3.3V Power Supply
BiCMOS
TTL Compatible Inputs and Outputs
Built-in Decoupling Caps and Multiple Ground Pins
for Low Noise Operation
Weight
WS512K32BV-XG2XE - 8 grams typical
WS512K32NBV-XH2XE - 13 grams typical
■
* This product is under development, is not qualified or characterized and is subject to
change or cancellation without notice.
PIN CONFIGURATION FOR WS512K32NBV-XH2XE
TOP VIEW
PIN DESCRIPTION
I/O0-31
A0-18
WE#1-4
CS#1-4
OE#
V
CC
GND
NC
Data Inputs/Outputs
Address Inputs
Write Enables
Chip Selects
Output Enable
Power Supply
Ground
Not Connected
BLOCK DIAGRAM
512K x 8
8
I/O0-7
512K x 8
8
I/O8-15
512K x 8
8
I/O16-23
512K x 8
8
I/O24-31
A0OE#
WE#1 CS#1
WE#2 CS#2
WE#3 CS#3
WE#4 CS#4
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