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參數資料
| 型號： | WS512K32V-20G2TM |
| 廠商： | Electronic Theatre Controls, Inc. |
| 元件分類： | SRAM |
| 英文描述： | 512Kx32 SRAM 3.3V MODULE |
| 中文描述： | 512Kx32 SRAM的3.3模塊 |
| 文件頁數： | 1/8頁 |
| 文件大?。?/td> | 128K |
| 代理商： | WS512K32V-20G2TM |
1
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
HI-RELIABILITY PRODUCT
WS512K32V-XXX
512Kx32 SRAM 3.3V MODULE
PRELIMINARY*
FEATURES
I
Access Times of 15, 17, 20ns
I
Low Voltage Operation
I
Packaging
66-pin, PGA Type, 1.075 inch square, Hermetic
Ceramic HIP (Package 400)
68 lead, 22.4mm (0.88") CQFP, 4.6mm (0.180") high,
(Package 509)
68 lead, 23.9mm (0.940" sq.) Low Profile CQFP (G1U),
3.56mm (0.140") high, (Package 519)
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Organized as 512Kx32; User Configurable as 1Mx16 or 2Mx8
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Commercial, Industrial and Military Temperature Ranges
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Low Voltage Operation:
3.3V
±
10% Power Supply
I
Low Power CMOS
I
TTL Compatible Inputs and Outputs
I
Fully Static Operation:
No clock or refresh required.
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Three State Output.
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Built-in Decoupling Caps and Multiple Ground Pins for Low
Noise Operation
I
Weight
WS512K32V-XG2TX - 8 grams typical
WS512K32V-XG1UX - 5 grams typical
WS512K32NV-XH1X - 13 grams typical
* This data sheet describes a product under development, not fully
characterized, and is subject to change without notice.
PIN CONFIGURATION FOR WS512K32NV-XH1X
TOP VIEW
PIN DESCRIPTION
I/O
0-31
Data Inputs/Outputs
A
0-18
Address Inputs
WE
1-4
Write Enables
CS
1-4
Chip Selects
OE
Output Enable
V
CC
Power Supply
GND
Ground
NC
Not Connected
I/O
8
I/O
9
I/O
10
A
13
A
14
A
15
A
16
A
17
I/O
0
I/O
1
I/O
2
WE
2
CS
2
GND
I/O
11
A
10
A
11
A
12
V
CC
CS
1
NC
I/O
3
I/O
15
I/O
14
I/O
13
I/O
12
OE
A
18
WE
1
I/O
7
I/O
6
I/O
5
I/O
4
I/O
24
I/O
25
I/O
26
A
6
A
7
NC
A
8
A
9
I/O
16
I/O
17
I/O
18
V
CC
CS
4
WE
4
I/O
27
A
3
A
4
A
5
WE
3
CS
3
GND
I/O
19
I/O
31
I/O
30
I/O
29
I/O
28
A
0
A
1
A
2
I/O
23
I/O
22
I/O
21
I/O
20
11 22 33 44 55 66
1 12 23 34 45 56
BLOCK DIAGRAM
512K x 8
8
I/O
0-7
CS
1
1
512K x 8
8
I/O
8-15
2
512K x 8
8
I/O
16-23
3
512K x 8
8
I/O
24-31
4
A
0-18
OE
WE
CS
2
WE
CS
3
WE
CS
4
WE
May 2001 Rev. 6
相關PDF資料 |
PDF描述 |
|---|---|
| WS512K32V-20G2TMA | 512Kx32 SRAM 3.3V MODULE |
| WS512K32V-20H1C | 512Kx32 SRAM 3.3V MODULE |
| WS512K32V-20H1CA | 512Kx32 SRAM 3.3V MODULE |
| WS512K32V-20H1I | 512Kx32 SRAM 3.3V MODULE |
| WS512K32NV-15H1IA | TVS Diode; Stand-Off Voltage, VRWM:5V; Breakdown Voltage, Vbr:6V; Peak Pulse Power PPK @ 8x20uS:500W; Capacitance, Cd:3pF; Package/Case:SOT-143; Breakdown Voltage Min:6V; Junction Capacitance:10pF; Leaded Process Compatible:No |
相關代理商/技術參數 |
參數描述 |
|---|---|
| WS512K32V-20G2TMA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:512Kx32 SRAM 3.3V MODULE |
| WS512K32V-20G2UC | 制造商:Microsemi Corporation 功能描述:512K X 32 SRAM MODULE, 3.3V, 20NS, 68 CQFP 0.88" SQ., 0.140" - Bulk |
| WS512K32V-20G2UI | 制造商:Microsemi Corporation 功能描述:512K X 32 SRAM MODULE, 3.3V, 20NS, 68 CQFP 0.88" SQ., 0.140" - Bulk |
| WS512K32V-20G2UIA | 制造商:White Electronic Designs 功能描述:SRAM Module Asynchronous 16Mbit |
| WS512K32V-20G2UM | 制造商:Microsemi Corporation 功能描述:512K X 32 SRAM MODULE, 3.3V, 20NS, 68 CQFP 0.88" SQ., 0.140" - Bulk |
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