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參數資料
| 型號： | WS57C128FB-70DM |
| 廠商： | 意法半導體 |
| 英文描述： | HIGH SPEED 16K x 8 CMOS EPROM |
| 中文描述： | 高速16K的× 8的CMOS存儲器 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 48K |
| 代理商： | WS57C128FB-70DM |
PRODUCT SELECTION GUIDE
PARAMETER
WS57C128FB-35
WS57C128FB-45
WS57C128FB-55
WS57C128FB-70
Address Access Time (Max)
35 ns
45 ns
55 ns
70 ns
Chip Select Time (Max)
35 ns
45 ns
55 ns
70 ns
Output Enable Time (Max)
20 ns
25 ns
25 ns
25 ns
WS57C128FB
3-7
HIGH SPEED 16K x 8 CMOS EPROM
KEY FEATURES
Very Fast Access Time
— 35 ns
Low Power Consumption
EPI Processing
— Latch-up Immunity Up to 200 mA
Standard EPROM Pinout
DIP and Surface Mount Packaging
Available
GENERAL DESCRIPTION
The WS57C128FB is a High Performance 128K UV Erasable Electrically Programmable Read Only Memory. It is
manufactured with an advanced CMOS technology which enables it to operate at Bipolar speeds while consuming
only 90 mA.
Two major features of the WS57C128FB are its Low Power and High Speed. These features make it an ideal
solution for applications which require fast access times, low power, and non-volatility. Typical applications include
systems which do not utilize mass storage devices and/or are board space limited.
The WS57C128FB is configured in the standard EPROM pinout which provides an easy upgrade path for systems
which are currently using standard EPROMs. The EPROMs are available in both 600 Mil DIP packages, and both
J-leaded and leadless surface mount packages.
V
CC
PGM
A13
A8
A9
A11
OE
A10
CE
O
7
O
6
O
5
O
4
O
3
V
PP
A
12
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
O
0
O
1
O
2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
A
8
A
9
A
11
NC
OE
A
10
CE
O
7
O
6
A
6
A
5
A
4
A
3
A
2
A
1
A
0
NC
O
0
A
7
A
1
V
P
N
V
C
P
A
1
O
1
O
2
NC
O
3
O
4
O
5
G
1
4 3
2
32 31 30
29
28
27
26
25
24
23
22
21
5
6
7
8
9
10
11
12
13
14 15 16 17 18 19 20
TOP VIEW
Chip Carrier
CERDIP
PIN CONFIGURATION
PINS
PGM
CE
OE
VPP
VCCOUTPUTS
MODE
Read
X
VIL
VIL
VCC
VCC
DOUT
Output
Disable
X
X
VIH
VCC
VCC
High Z
Standby
X
VIH
X
VCC
VCC
High Z
Program
VIL
VIL
VIH
VPP
VCC
DIN
Program
Verify
VIH
VIL
VIL
VPP
VCC
DOUT
Program
Inhibit
X
VIH
X
VPP
VCC
High Z
X can be VILor VIH.
MODE SELECTION
Return to Main Menu
相關PDF資料 |
PDF描述 |
|---|---|
| WS57C128FB-70DMB | HIGH SPEED 16K x 8 CMOS EPROM |
| WS57C128 | HIGH SPEED 16K x 8 CMOS EPROM |
| WS57C128FB | HIGH SPEED 16K x 8 CMOS EPROM |
| WS57C128FB | Military High Speed 16K×8 COMS EEPROM(高速16K×8 CMOS EPROM) |
| WS57C191C | Miitary High Speed 16K×8 COMS EEPROM(高速2K×8CMOS PROM/RPROM) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| WS57C128FB-70DMB | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH SPEED 16K x 8 CMOS EPROM |
| WS57C191 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH SPEED 2K x 8 CMOS PROM/RPROM |
| WS57C191C | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:MILITARY HIGH SPEED 2K x 8 CMOS PROM/RPROM |
| WS57C191C- | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:WS57C191C/291C MILITARY HIGH SPEED 2K X 8 CMOS PROM/RPROM |
| WS57C191C-1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:MILITARY HIGH SPEED 2K x 8 CMOS PROM/RPROM |
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