
WS57C43C
V
CC
A
8
A
9
A10
CS1/V
PP
A
11
CS2
O
7
O
6
O
5
O
4
O
3
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
O
0
O
1
O
2
GND
A
10
CS1/V
PP
A
11
CS2
NC
O
7
O
6
A
5
A
6
A
7
V
CC
A
8
A
9
NC
A
4
A
3
A
2
A
1
A
0
NC
O
0
O
1
O
2
NC O
3
O
4
O
5
GND
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
1
4 3
2
28 27 26
25
24
23
22
21
20
19
5
6
7
8
9
10
11
12 13 14 15 16 17 18
TOP VIEW
Chip Carrier
CERDIP/Plastic DIP
PIN CONFIGURATION
2-31
HIGH SPEED 4K x 8 CMOS PROM/RPROM
KEY FEATURES
Ultra-Fast Access Time
— t
ACC
= 25 ns
— t
CS
= 12 ns
Low Power Consumption
Fast Programming
Pin Compatible with 4K x 8 Bipolar PROMs
Immune to Latch-UP
— Up to 200 mA
ESD Protection Exceeds 2000 V
Available in 300 Mil DIP and PLDCC
GENERAL DESCRIPTION
The WS57C43C is a High Performance 32K UV Erasable Electrically Re-Programmable Read Only Memory
(RPROM). It is manufactured in an advanced CMOS technology which enables it to operate at Bipolar PROM
speeds while consuming only 25% of the power required by its Bipolar counterparts. A further advantage of the
WS57C43C over Bipolar PROM devices is the fact that it utilizes a proven EPROM technology. This enables the
entire memory array to be tested for switching characteristics and functionality after assembly. Unlike devices which
cannot be erased, every WS5743C in a windowed package is 100% tested with worst case test patterns both
before and after assembly.
The WS57C43C is configured in the standard Bipolar PROM pinout which provides an easy upgrade path for
systems which are currently using Bipolar PROMs, or its predecessor, the WS57C43B.
PRODUCT SELECTION GUIDE
PARAMETER
Address Access Time (Max)
CS to Output Valid Time (Max)
57C43C-25
25 ns
12 ns
57C43C-35
35 ns
20 ns
57C43C-45
45 ns
25 ns
57C43C-55
55 ns
25 ns
57C43C-70
70 ns
25 ns
ROW
DECODER
EPROM ARRAY
32,768 BITS
COLUMN
DECODER
SENSE
AMPLIFIERS
8
CS2
OUTPUTS
CS1/V
PP
A0 - A4
COLUMN
ADDRESSES
A5 - A11
ROW
ADDRESSES
7
5
BLOCK DIAGRAM
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