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參數(shù)資料
| 型號： | WSB1151 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | PNP EPITAXIAL SILICON TRANSISTOR |
| 中文描述： | 進步黨外延硅晶體管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 142K |
| 代理商： | WSB1151 |
WSB1151
JAN. 2003 REV:00
copyright@wooseok s.tech corp. All rights reserved.
HIGH CURRENT AMPLIFIER
◇
Low Collector Saturation Voltage
◇
Complement to WSD1691
ABSOLUTE MAXIMUM RATINGS
(Ta=25
℃
)
ELECTRICAL CHARACTERISTICS
(Ta=25
℃
, unless otherwise specified)
Characteristic
Symbol
Test Condition
Min
TYP
MA
X
Unit
Collector Cut-off Current
I
CBO
V
CB=-
50V ,I
E=
0
-10
Emitter Cut-off Current
I
EBO
V
EB
=-7V
,I
C
=0
-10
*DC Current Gain
h
FE1
#h
FE2
h
FE3
V
CE
=-1V ,I
C
=-100mA
V
CE
=-1V ,I
C
=-2.0A
V
CE
=-2V, I
C
=-5.0A
60
100
50
200
400
*Collector-Emitter Saturation
Voltage
V
CE
(sat)
I
C
=-2A, I
B
=-200mA
-0.14
-0.3
V
*Base-Emitter Saturation
Voltage
V
BE
(sat)
I
C
=-2A, I
B
=-200mA
-0.9
-1.2
V
Turn on Time
t
ON
I
C
=-2.0A, R
L
=5
0.15
1
Storage Time
t
STG
I
B1
=-I
B2
=200mA,
0.78
2.5
Fall Time
t
F
V
CC
=-10V
0.18
1
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
-60
V
Collector-Emitter Voltage
V
CEO
-60
V
Emitter-Base voltage
V
EBO
-7
V
Collector Current(DC)
I
C
-5.0
A
Collector Current(Pulse)
I
C
-8.0
A
Collector Power Dissipation(Tc=25
℃
)
P
C
20
W
Collector Power Dissipation(Ta=25
℃
)
P
C
1.3
W
Junction Temperature
Tj
150
℃
Storage Temperature
Tstg
-55~
+150
℃
WR0459
1. Emitter
2. Collector
3. Base
1
3
2
PNP EPITAXIAL SILICON TRANSISTOR
* Pulse Test :PW=350
,Duty Cycle=2% Pulsed
# hFE(2) Classification:
Classification
O
Y
G
h
FE
100~200
160~320
200~400
2
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