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參數資料
| 型號： | WSE128K16-300H1MA |
| 英文描述： | 128Kx16 SRAM/EEPROM MODULE |
| 中文描述： | 128Kx16的SRAM / EEPROM的模塊 |
| 文件頁數： | 1/15頁 |
| 文件大小： | 580K |
| 代理商： | WSE128K16-300H1MA |
WSE128K16-XXX
PRELIMINARY*
1
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
March 2005
Rev. 3
128Kx16 SRAM/EEPROM MODULE
FEATURES
Access Times of 35ns (SRAM) and 150ns (EEPROM)
Access Times of 45ns (SRAM) and 120ns (EEPROM)
Access Times of 70ns (SRAM) and 300ns (EEPROM)
Packaging
66 pin, PGA Type, 1.075" square HIP, Hermetic
Ceramic HIP (H1) (Package 400)
68 lead, Hermetic CQFP (G2T), 22mm (0.880")
square (Package 509). Designed to fit JEDEC 68
lead 0.990" CQFJ footprint (FIGURE 2)
128Kx16 SRAM
128Kx16 EEPROM
Organized as 128Kx16 of SRAM and 128Kx16 of
EEPROM Memory with separate Data Buses
Both blocks of memory are User Configurable as
256Kx8
Low Power CMOS
BLOCK DIAGRAM
SWE
2
# SCS
2
#
SWE
1
# SCS
1
#
PIN DESCRIPTION
EEPROM Data Inputs/Outputs
SRAM Data Inputs/Outputs
Address Inputs
SRAM Write Enable
SRAM Chip Selects
Output Enable
Power Supply
Ground
Not Connected
EEPROM Write Enable
EEPROM Chip Select
ED
0-15
SD
0-15
A
0-16
SWE#
1-2
SCS#
1-2
OE#
V
CC
GND
NC
EWE#
1-2
ECS#
1-2
Top View
FIGURE 1 – WSE128K16-XH1X PIN
CONFIGURATION
Commercial, Industrial and Military Temperature
Ranges
TTL Compatible Inputs and Outputs
Built-in Decoupling Caps and Multiple Ground Pins
for Low Noise Operation
Weight - 13 grams typical
EEPROM MEMORY FEATURES
Write Endurance 10,000 Cycles
Data Retention at 25°C, 10 Years
Low Power CMOS Operation
Automatic Page Write Operation
Page Write Cycle Time 10ms Max.
Data Polling for End of Write Detection
Hardware and Software Data Protection
TTL Compatible Inputs and Outputs
* This product is under development, is not qualified or characterized and is subject to
change without notice.
SD
8
SD
9
SD
10
A
13
A
14
A
15
A
16
NC
SD
0
SD
1
SD
2
11
22
33
44
55
66
1
12
23
34
45
56
ED
8
ED
9
ED
10
A
6
A
7
NC
A
8
A
9
ED
0
ED
1
ED
2
SD
15
SD
14
SD
13
SD
12
OE#
NC
SWE#
1
SD
7
SD
6
SD
5
SD
4
SWE
2
#
SCS
2
#
GND
SD
11
A
10
A
11
A
12
V
CC
SCS
1
#
NC
SD
3
ED
15
ED
14
ED
13
ED
12
A
0
A
1
A
2
ED
7
ED
6
ED
5
ED
5
V
CC
ECS
2
#
EWE
2
#
ED
11
A
3
A
4
A
5
EWE
1
#
ECS
1
#
GND
ED
3
EWE
1
# ECS
1
#
EWE
2
# ECS
2
#
1SRAM
8
SD
0-7
1SRAM
8
SD
8-15
128K x 8
8
ED
0-7
128K x 8
8
ED
8-15
A
0-16
OE#
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