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參數(shù)資料
| 型號： | WSF512K32-29G2TI |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | 存儲器 |
| 英文描述： | SPECIALTY MEMORY CIRCUIT, CQFP68 |
| 封裝： | CERAMIC, QFP-68 |
| 文件頁數(shù)： | 1/14頁 |
| 文件大小： | 485K |
| 代理商： | WSF512K32-29G2TI |
1
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
WSF512K32-XXX
May 2006
Rev. 9
I/O8
I/O9
I/O10
A14
A16
A11
A0
A18
I/O0
I/O1
I/O2
FWE2#
SWE2#
GND
I/O11
A10
A9
A15
VCC
FCS#
SCS#
I/O3
I/O15
I/O14
I/O13
I/O12
OE#
A17
FWE1#
I/O7
I/O6
I/O5
I/O4
I/O24
I/O25
I/O26
A7
A12
SWE1#
A13
A8
I/O16
I/O17
I/O18
VCC
SWE4#
FWE4#
I/O27
A4
A5
A6
FWE3#
SWE3#
GND
I/O19
I/O31
I/O30
I/O29
I/O28
A1
A2
A3
I/O23
I/O22
I/O21
I/O20
11
22
33
44
55
66
1
12
23
34
45
56
512KX32 SRAM / FLASH MODULE
Built in Decoupling Caps and Multiple Ground Pins
for Low Noise Operation
Weight - 13 grams typical
FLASH MEMORY FEATURES
100,000 Erase/Program Cycles
Sector Architecture
8 equal size sectors of 64KBytes each
Any combination of sectors can be concurrently
erased. Also supports full chip erase
5 Volt Programming; 5V ± 10% Supply
Embedded Erase and Program Algorithms
Hardware Write Protection
Page Program Operation and Internal Program
Control Time.
* This product is subject to change without notice.
Note: Programming information available upon request.
Figure 1 – PIN CONFIGURATION FOR WSF512K32-29H2X
Block Diagram
Pin Description
I/O0-31
Data Inputs/Outputs
A0-18
Address Inputs
SWE1-4#
SRAM Write Enables
SCS#
SRAM Chip Select
OE#
Output Enable
VCC
Power Supply
GND
Ground
NC
Not Connected
FWE1-4#
Flash Write Enables
FCS#
Flash Chip Select
OE#
FCS#
SCS#
A0-18
FWE 1# SWE 1#
512K x 8 Flash
512K x 8 SRAM
I/O0-7
FWE 2# SWE 2#
512K x 8 Flash
512K x 8 SRAM
I/O8-15
FWE 3# SWE 3#
512K x 8 Flash
512K x 8 SRAM
I/O16-23
FWE 4# SWE 4#
512K x 8 Flash
512K x 8 SRAM
I/O24-31
FEATURES
Access Times of 25ns (SRAM) and 70, 90ns
(FLASH)
Packaging
66 pin, PGA Type, 1.385" square HIP, Hermetic
Ceramic HIP (Package 402)
68 lead, Hermetic CQFP (G2T), 22.4mm (0.880")
square (Package 509) 4.57mm (0.180") height.
Designed to t JEDEC 68 lead 0.990" CQFJ
footprint (Figure 2). Package to be developed.
512Kx32 SRAM
512Kx32 5V Flash
Organized as 512Kx32 of SRAM and 512Kx32 of
Flash Memory with common Data Bus
Low Power CMOS
Commercial, Industrial and Military Temperature
Ranges
TTL Compatible Inputs and Outputs
Top View
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| WSF512K32-29G2TIA | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512KX32 SRAM / FLASH MODULE |
| WSF512K32-29G2TM | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512KX32 SRAM / FLASH MODULE |
| WSF512K32-29G2TMA | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512KX32 SRAM / FLASH MODULE |
| WSF512K32-29H2C | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512KX32 SRAM / FLASH MODULE |
| WSF512K32-29H2CA | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512KX32 SRAM / FLASH MODULE |
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