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參數(shù)資料
| 型號(hào)： | WST2907 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | PNP EPITAXIAL SILICON TRANSISTOR |
| 中文描述： | 進(jìn)步黨外延硅晶體管 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 140K |
| 代理商： | WST2907 |
WST2907/S
JAN.2003 REV:01
copyright@wooseok s.tech corp. All rights reserved.
GENERAL PURPOSE APPLICATION
SWITCHING APPLICATION
◇
Collector Current Ic=600mA
◇
Complementary to WST2222/S
ABSOLUTE MAXIMUM RATINGS
(Ta=25
℃
)
◇
Mark Information
◇
Ordering Information
ELECTRICAL CHARACTERISTICS
(Ta=25
℃
, unless otherwise specified)
2 B
SOT-23
1. Emitter
2. Base
3. Collector
1
2
3
1
2
3
TO-92
Device
Package
WST2907
TO-92
WST2907S
SOT-23
PNP EPITAXIAL SILICON TRANSISTOR
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
-60
V
Collector-Emitter Voltage
V
CEO
-40
V
Emitter-Base voltage
V
EBO
-5
V
Collector Current
I
C
-600
mA
Collector Power Dissipation
P
C
TO-92
SOT-23(S):350
:650
mW
Junction Temperature
Tj
150
℃
Storage Temperature
Tstg
-55~
+150
℃
Characteristic
Symbol
Test Condition
Min
TYP
MAX
Unit
Collector-base breakdown voltage
BV
CBO
I
C
=-10
,I
E
=0
-60
V
Collector-emitter breakdown voltage
BV
CEO
I
C
=-10mA
,I
B
=0
-40
V
Emitter-base breakdown voltage
BV
EBO
I
E
=-10
,I
C
=0
-5
V
Collector cut-off current
I
CBO
V
CB
=-50V
,I
E
=0
-20
DC current gain
h
FE
V
CE
=-10V,I
C
=-10mA
75
Collector-emitter saturation voltage
V
CE
(sat)
I
C
=-150
, I
B
=-15
I
C
=-500
, I
B
=-50
-0.4
-1.6
V
Base-emitter saturation voltage
V
BE
(sat)
I
C
=-150
, I
B
=-15
I
C
=-500
, I
B
=-50
-1.3
-2.6
V
Output Capacitance
Cob
V
CB
=-10V,f=1MHZ
8
P
F
Transition Frequency
f
T
V
CE
=-20V, I
C
=-50
250
MHZ
Turn on Time
t
ON
Vcc=-30V,Ic=-150mA,
I
B1=
-15mA
45
ns
Turn off Time
t
OFF
Vcc=-6V,Ic=-150mA,
I
B1=
I
B2=15mA
100
ns
1
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