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參數資料
| 型號： | X22C12SMB |
| 英文描述： | Nonvolatile Static RAM |
| 中文描述： | 非易失性靜態RAM |
| 文件頁數： | 1/12頁 |
| 文件大小： | 60K |
| 代理商： | X22C12SMB |
X22C12
1
Nonvolatile Static RAM
Xicor, Inc. 1991, 1995 Patents Pending
3817-2.4 7/30/96 T0/C0/D1 SH
Characteristics subject to change without notice
FEATURES
High Performance CMOS
—150ns RAM Access Time
High Reliability
—Store Cycles: 1,000,000
—Data Retention: 100 Years
Low Power Consumption
—Active: 40mA Max.
—Standby: 100
μ
A Max.
Infinite Array Recall, RAM Read and Write Cycles
Nonvolatile Store Inhibit: V
CC
= 3.5V Typical
Fully TTL and CMOS Compatible
JEDEC Standard 18-Pin 300-mil DIP
100% Compatible with X2212
—With Timing Enhancements
DESCRIPTION
The X22C12 is a 256 x 4 CMOS NOVRAM featuring a
high-speed static RAM overlaid bit-for-bit with a non-
volatile E
2
PROM. The NOVRAM design allows data to
be easily transferred from RAM to E
2
PROM (STORE)
and from E
2
PROM to RAM (RECALL). The STORE
operation is completed within 5ms or less and the
RECALL is completed within 1
μ
s.
Xicor NOVRAMs are designed for unlimited write opera-
tions to the RAM, either RECALLs from E
2
PROM or
writes from the host. The X22C12 will reliably endure
1,000,000 STORE cycles. Inherent data retention is
greater than 100 years.
3817 FHD F01
NONVOLATILE E2PROM
MEMORY ARRAY
ROW
SELECT
STATIC RAM
MEMORY ARRAY
COLUMN SELECT
INPUT
DATA
CONTROL
CONTROL
LOGIC
VCC
VSS
COLUMN
I/O CIRCUITS
STORE
RECALL
I/O1
I/O2
I/O3
I/O4
CS
WE
A7
A6
A5
ARRAY
RECALL
STORE
A0
A1
A2
A3
A4
1K Bit
X22C12
256 x 4
FUNCTIONAL DIAGRAM
PIN CONFIGURATION
PLASTIC DIP
CERDIP
A7
A4
A3
A2
A1
A0
CS
VSS
STORE
1
2
3
4
5
6
7
8
9
18
17
16
15
14
13
12
11
10
VCC
A6
A5
I/O4
I/O3
I/O2
I/01
WE
X22C12
RECALL
3817 FHD F02
SOIC
3815 FHD F10.1
A7
A4
A3
A2
A1
A0
CS
VSS
STORE
RECALL
1
VCC
A6
A5
I/O4
NC
NC
I/O3
I/O2
I/O1
WE
X22C12
2
3
4
5
6
7
8
20
19
18
17
16
15
14
13
9
10
12
11
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