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參數資料
| 型號： | X2804CPI-90 |
| 英文描述： | 5 Volt, Byte Alterable E2PROM |
| 中文描述： | 5伏，可變E2PROM的字節 |
| 文件頁數： | 1/13頁 |
| 文件大小： | 54K |
| 代理商： | X2804CPI-90 |
X2804C
1
Xicor, Inc. 1993, 1995 Patents Pending
6612-1.3 3/27/96 T2/C1/D1 NS
Characteristics subject to change without notice
5 Volt, Byte Alterable E
2
PROM
FEATURES
90ns Access Time
Simple Byte and Page Write
—Single 5V Supply
—No External High Voltages or V
PP
Control
Circuits
—Self-Timed
—No Erase Before Write
—No Complex Programming Algorithms
—No Overerase Problem
High Performance Advanced NMOS Technology
Fast Write Cycle Times
—16 Byte Page Write Operation
—Byte or Page Write Cycle: 5ms Typical
—Complete Memory Rewrite: 640ms Typical
—Effective Byte Write Cycle Time: 300
μ
s
Typical
DATA
Polling
—Allows User to Minimize Write Cycle Time
JEDEC Approved Byte-Wide Pinout
High Reliability
—Endurance: 10,000 Cycles
—Data Retention: 100 Years
DESCRIPTION
The Xicor X2804C is a 512 x 8 E
2
PROM, fabricated with
an advanced, high performance N-channel floating gate
MOS technology. Like all Xicor Programmable nonvola-
tile memories it is a 5V only device. The X2804C
features the JEDEC approved pinout for byte-wide
memories, compatible with industry standard RAMs,
ROMs and EPROMs.
The X2804C supports a 16-byte page write operation,
typically providing a 300
μ
s/byte write cycle, enabling the
entire memory to be written in less than 640ms. The
X2804C also features
DATA
Polling, a system software
support scheme used to indicate the early completion of
a write cycle.
Xicor E
2
PROMs are designed and tested for applica-
tions requiring extended endurance. Inherent data re-
tention is greater than 100 years.
4K
X2804C
512 x 8 Bit
PIN CONFIGURATION
6612 FHD F02.1
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
VSS
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
VCC
A8
NC
WE
OE
NC
CE
I/O7
I/O6
I/O5
I/04
I/O3
X2804C
PLASTIC DIP
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