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參數(shù)資料
| 型號： | X2N4351 |
| 廠商： | CALOGIC LLC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch |
| 中文描述： | 100 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | DIE |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 18K |
| 代理商： | X2N4351 |
N-Channel Enhancement Mode
MOSFET General Purpose
Ampifier/Swtch
2N4351
FEATURES
Low ON Resistance
Low Capacitance
High Gain
High Gate Breakdown Voltage
Low Threshold Voltage
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25
o
C unless otherwise noted)
Drain-Source Voltage or Drain-Body Voltage . . . . . . . . . . 25V
Peak Gate-Source Voltage (Note 1) . . . . . . . . . . . . . . .
±
125V
Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Storage Temperature Range . . . . . . . . . . . . . -65
o
C to +200
o
C
Operating Temperature Range . . . . . . . . . . . -55
o
C to +150
o
C
Lead Temperature (Soldering, 10sec). . . . . . . . . . . . . +300
o
C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375mW
Derate above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . 3mW/
o
C
NOTE:
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
Part
2N4351
X2N4351
Package
Hermetic TO-72
Sorted Chips in Carriers
Temperature Range
-55
o
C to +150
o
C
-55
o
C to +150
o
C
C ORPORATION
PIN CONFIGURATION
TO-72
G
D
C
S
ELECTRICAL CHARACTERISTICS
(T
A
= 25
o
C unless otherwise specified)
SYMBOL
PARAMETER
MIN
MAX
UNITS
TEST CONDITIONS
BV
DSS
Drain-Source Breakdown Voltage
25
V
I
D
= 10
μ
A, V
GS
= 0
I
GSS
Gate Leakage Current
10
pA
V
GS
=
±
30V, V
DS
= 0
I
DSS
Zero-Gate-Voltage Drain Current
10
nA
V
DS
= 10V, V
GS
= 0
V
GS(th)
Gate-Source Threshold Voltage
1
5
V
V
DS
= 10V, I
D
= 10
μ
A
I
D(on)
"ON" Drain Current
3
mA
V
GS
= 10V, V
DS
= 10V
V
DS(on)
Drain-Source "ON" Voltage
1
V
I
D
= 2mA, V
GS
= 10V
r
DS(on)
Drain-Source Resistance
300
ohms
V
GS
= 10V, I
D
= 0, f = 1kHz
| y
fs
|
Forward Transfer Admittance
1000
μ
S
V
DS
= 10V, I
D
= 2mA, f = 1kHz
C
rss
Reverse Transfer Capacitance (Note 2)
1.3
pF
V
DS
= 0, V
GS
= 0, f = 1MHz
C
iss
Input Capacitance (Note 2)
5.0
V
DS
= 10V, V
GS
= 0, f = 1MHz
C
d(sub)
Drain-Substrate Capacitance (Note 2)
5.0
V
D(SUB)
= 10V, f = 1MHz
t
d(on)
Turn-On Delay (Note 2)
45
ns
t
r
Rise Time (Note 2)
65
t
d(off)
Turn-Off Delay (Note 2)
60
t
f
Fall Time (Note 2)
100
NOTES: 1.
Device must not be tested at
±
125V more than once or longer than 300ms.
2.
For design reference only, not 100% tested.
1003
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