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參數(shù)資料
| 型號： | X2N5116 |
| 英文描述： | TRANSISTOR | JFET | P-CHANNEL | 25MA I(DSS) | CHIP |
| 中文描述： | 晶體管|場效應(yīng)| P通道| 25mA電流我（直）|芯片 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 27K |
| 代理商： | X2N5116 |
P-Channel JFET Swtch
2N5114 – 2N5116
GENERAL DESCRIPTION
Ideal for inverting switching or "Virtual Gnd" switching into
inverting input of Op. Amp. No driver is required and
±
10VAC
signals can be handled using only +5V logic (TTL or CMOS).
FEATURES
Low ON Resistance
I
D(off)
<500pA
Switches directly from TTL Logic
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25
o
C unless otherwise noted)
Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . . 30V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Storage Temperature Range . . . . . . . . . . . . . -65
o
C to +200
o
C
Operating Temperature Range . . . . . . . . . . . -55
o
C to +200
o
C
Lead Temperature (Soldering, 10sec). . . . . . . . . . . . . +300
o
C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Derate above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . 3mW/
o
C
NOTE:
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
Part
2N5114-16
X2N5114-16 Sorted Chips in Carriers
Package
Hermetic TO-18
Temperature Range
-55
o
C to +200
o
C
-55
o
C to +200
o
C
C ORPORATION
PIN CONFIGURATION
S
TO-18
G,C
D
SWITCHING CHARACTERISTICS
(T
A
= 25
o
C unless otherwise specified)
SYMBOL
PARAMETER
2N5114
MAX
6
2N5115
MAX
10
2N5116
MAX
12
UNITS
t
d
Turn-ON Delay Time
ns
t
r
Rise Time (Note 2)
10
20
30
t
off
Turn-OFF Delay Time (Note 2)
6
8
10
t
f
Fall Time (Note 2)
15
30
50
ELECTRICAL CHARACTERISTICS
(T
A
= 25
o
C unless otherwise specified)
SYMBOL
PARAMETER
2N5114
MIN
30
2N5115
MIN
30
2N5116
MIN
30
UNITS
TEST CONDITIONS
MAX
MAX
MAX
BV
GSS
Gate-Source Breakdown Voltage
V
I
G
= 1
μ
A, V
DS
= 0
I
GSS
Gate Reverse Current
500
500
500
pA
V
GS
= 20V, V
DS
= 0
1.0
1.0
1.0
μ
A
T
A
150
o
C
I
D(off)
Drain Cutoff Current
-500
-500
-500
pA
V
DS
= -15V
V
GS
= 12V (2N5114)
V
GS
= 7V (2N5115)
V
GS
= 5V (2N5116)
-1.0
-1.0
-1.0
μ
A
V
P
Gate-Source Pinch-Off Voltage
5
10
3
6
1
4
V
V
DS
= -15V, I
D
= -1nA
5508
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