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參數資料
| 型號： | XB1002 |
| 廠商： | MIMIX BROADBAND INC |
| 元件分類： | 衰減器 |
| 英文描述： | 36.0-43.0 GHz GaAs MMIC Buffer Amplifier |
| 中文描述： | 36000 MHz - 43000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | DIE-6 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 387K |
| 代理商： | XB1002 |
Mimix Broadband
s four stage 36.0-43.0 GHz GaAs
MMIC buffer amplifier has a small signal gain of 24.0
dB with a noise figure of 4.0 dB across the band. Gain
increases with frequency to compensate for other
component roll-off factors common in 38.0-40.0 GHz
systems. This MMIC uses Mimix Broadband
s 0.15
m
GaAs PHEMT device model technology, and is based
upon electron beam lithography to ensure high
repeatability and uniformity. The chip has surface
passivation to protect and provide a rugged part with
backside via holes and gold metallization to allow
either a conductive epoxy or eutectic solder die
attach process. This device is well suited for
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM
and VSAT applications.
36.0-43.0 GHz GaAs MMIC
Buffer Amplifier
Frequency Range (f)
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness (
S21)
Reverse Isolation (S12)
Noise Figure (NF)
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept Point (OIP3)
Drain Bias Voltage (Vd1,2)
Gate Bias Voltage (Vg1,2)
Supply Current (Id) (Vd=3.0V, Vg=-0.5V Typical)
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Parameter
Page 1 of 6
Features
High Dynamic Range/Postivie Gain Slope
Excellent LO Driver/Buffer Amplifier
Low Noise or Power Bias Configurations
24.0 dB Small Signal Gain
4.0 dB Noise Figure at Low Noise Bias
+14 dBm P1dB Compression Point at Low Noise Bias
100% On-Wafer RF, DC and Noise Figure Testing
100% Visual Inspection to MIL-STD-883
Method 2010
General Description
Units
GHz
dB
dB
dB
dB
dB
dB
dBm
dBm
VDC
VDC
mA
Min.
36.0
-
-
-
-
-
-
-
-
-
-1.0
-
Typ.
-
8.0
8.0
24.0
+/-2.5
45.0
4.0
+14.0
+24.0
+3.0
-0.5
110
Max.
43.0
-
-
-
-
-
-
-
-
+5.5
0.0
220
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
250 mA
+0.3 VDC
-8.0, -3.0 dBm
-65 to +165
O
C
-55 to MTTF Table
MTTF Table
Chip Device Layout
(1) Optional power bias Vd1,2=5.5V, Id=220mA will typically yield 3-4 dB improved P1dB and OIP3.
(2) Measured using constant current.
(3) Channel temperature affects a device's MTBF. It is
recommended to keep channel temperature as low as
possible for maximum life.
3
1,2
1,2
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
3
April 2005 - Rev 01-Apr-05
B1002
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相關代理商/技術參數 |
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| XB1004 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:16.0-30.0 GHz GaAs MMIC Buffer Amplifier |
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| XB1004-BD-EV1 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:16.0-30.0 GHz GaAs MMIC Buffer Amplifier |
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