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參數資料
| 型號： | XB1007-BD-EV1 |
| 廠商： | Mimix Broadband, Inc. |
| 英文描述： | 4.0-11.0 GHz GaAs MMIC Buffer Amplifier |
| 中文描述： | 4.0-11.0 GHz的砷化鎵單片緩沖放大器 |
| 文件頁數： | 1/9頁 |
| 文件大小： | 235K |
| 代理商： | XB1007-BD-EV1 |
4.0-11.0 GHz GaAs MMIC
Buffer Amplifier
Excellent Transmit LO/Output Buffer Stage
Compact Size
23.0 dB Small Signal Gain
+20.0 dBm P1dB Compression Point
4.5 dB Noise Figure
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883 Method 2010
Features
Chip Device Layout
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id1)
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
180 mA
+0.3 VDC
+20.0 dBm
-65 to +165
O
C
-55 to MTTF Graph
1
MTTF Graph
1
Page 1 of 9
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Parameter
Frequency Range (f)
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness ( S21)
Reverse Isolation (S12)
Noise Figure
Output Power for 1dB Compression (P1dB)
Saturated Output Power (Psat)
Drain Bias Voltage (Vd2)
Gate Bias Voltage (Vg2)
Supply Current (Id) (Vd=4.5V, Vg2=-0.5V Typical)
(2) Measured using constant current.
Units
GHz
dB
dB
dB
dB
dB
dB
dBm
dBm
VDC
VDC
mA
Min.
4.0
-
-
-
-
-
-
-
-
-
-1.0
-
Typ.
-
20.0
12.0
23.0
+/-1.5
65.0
4.5
+20.0
+21.0
+4.5
-0.5
130
Max.
11.0
-
-
-
-
-
-
-
-
+5.5
0.0
155
2
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
B1007-BD
Mimix Broadband’s two stage 4.0-11.0 GHz GaAs
MMIC buffer amplifier has a small signal gain of 23.0
dB with a +20.0 dBm P1dB output compression point.
This MMIC uses Mimix Broadband’s 0.15 μm GaAs
PHEMT device model technology, and is based upon
electron beam lithography to ensure high
repeatability and uniformity. The chip has surface
passivation to protect and provide a rugged part with
backside via holes and gold metallization to allow
either a conductive epoxy or eutectic solder die
attach process. This device is well suited for
Microwave and Millimeter-wave Point-to-Point Radio,
LMDS, SATCOM and VSAT applications.
General Description
March 2007 - Rev 06-Mar-07
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相關代理商/技術參數 |
參數描述 |
|---|---|
| XB1007-QT | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:4.0-11.0 GHz GaAs MMIC Buffer Amplifier, QFN |
| XB1007-QT_10 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:4.0-11.0 GHz GaAs MMIC |
| XB1007-QT-0G00 | 制造商:M/A-COM Technology Solutions 功能描述:MMICBUFFER AMPLIFIER, QFNEXCELLENT - Bulk 制造商:M/A-COM Technology Solutions 功能描述:MMW BUFFER AMPLIFIER 制造商:M/A-COM Technology Solutions 功能描述:RF Amp Chip Single Buffer Amp 11GHz 4V 16-Pin QFN EP T/R |
| XB1007-QT-0G0T | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:4.0-11.0 GHz GaAs MMIC Buffer Amplifier, QFN |
| XB1007-QT-EV1 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:4.0-11.0 GHz GaAs MMIC Buffer Amplifier, QFN |
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