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參數資料
| 型號： | XD1004-BD |
| 廠商： | Mimix Broadband, Inc. |
| 英文描述： | 10.0-40.0 GHz GaAs MMIC Distributed Amplifier |
| 中文描述： | 10.0-40.0千兆赫的GaAs MMIC分布式放大器 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 539K |
| 代理商： | XD1004-BD |
Mimix Broadband’s 10.0-40.0 GHz GaAs MMIC
distributed amplifier has a small signal gain of 17.0 dB
with a noise figure of 5.0 dB. This MMIC uses Mimix
Broadband’s 0.15 μm GaAs PHEMT device model
technology, and is based upon electron beam
lithography to ensure high repeatability and uniformity.
The chip has surface passivation to protect and provide
a rugged part with backside via holes and gold
metallization to allow either a conductive epoxy or
eutectic solder die attach process. This device is well
suited for microwave, millimeter-wave, wideband
military, and fiber optic applications.
10.0-40.0 GHz GaAs MMIC
Distributed Amplifier
Absolute Maximum Ratings
Page 1 of 6
Features
Ultra Wide Band Driver Amplifier
Self Biased Architecture
17.0 dB Small Signal Gain
5.0 dB Noise Figure
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883
Method 2010
General Description
Supply Voltage (Vd)
Supply Current (Id)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
175 mA
+17 dBm
-65 to +165
O
C
-55 to MTTF Table
MTTF Table
Chip Device Layout
(2) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
2
Frequency Range (f)
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness ( S21)
Reverse Isolation (S12)
Noise Figure (NF)
Output Power for 1 dB Compression Point (P1dB)
1
Drain Bias Voltage (Vd)
Supply Current (Id) (Vd=5.0V)
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Parameter
Units
GHz
dB
dB
dB
dB
dB
dB
dBm
VDC
mA
Min.
10.0
-
-
-
-
-
-
-
-
-
Typ.
-
7.0
12.0
17.0
+/-2.5
30.0
5.0
TBD
+5.0
115
Max.
40.0
-
-
-
-
-
-
-
+5.5
145
(1) Measured using constant current.
2
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
December 2006 - Rev 19-Dec-06
D1004-BD
XD1004-BD
相關PDF資料 |
PDF描述 |
|---|---|
| XD1004-BD-000V | 10.0-40.0 GHz GaAs MMIC Distributed Amplifier |
| XD1004-BD-EV1 | 10.0-40.0 GHz GaAs MMIC Distributed Amplifier |
| XD1004-QT | 10.0-40.0 GHz GaAs MMIC Distributed Amplifier, QFN |
| XD1004-QT-0G00 | 10.0-40.0 GHz GaAs MMIC Distributed Amplifier, QFN |
| XD1004-QT-EV1 | 10.0-40.0 GHz GaAs MMIC Distributed Amplifier, QFN |
相關代理商/技術參數 |
參數描述 |
|---|---|
| XD1004-BD-000V | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:10.0-40.0 GHz GaAs MMIC Distributed Amplifier |
| XD1004-BD-EV1 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:10.0-40.0 GHz GaAs MMIC Distributed Amplifier |
| XD1004-QT | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:10.0-40.0 GHz GaAs MMIC Distributed Amplifier, QFN |
| XD1004-QT-0G00 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:10.0-40.0 GHz GaAs MMIC Distributed Amplifier, QFN |
| XD1004-QT-EV1 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:10.0-40.0 GHz GaAs MMIC Distributed Amplifier, QFN |
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