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參數資料
| 型號： | XL1007-QT |
| 廠商： | Mimix Broadband, Inc. |
| 英文描述： | 3.5-8.0 GHz GaAs MMIC Packaged Low Noise Amplifier |
| 中文描述： | 3.5-8.0 GHz的砷化鎵微波單片集成電路封裝低噪聲放大器 |
| 文件頁數： | 1/7頁 |
| 文件大小： | 430K |
| 代理商： | XL1007-QT |
3.5-8.0 GHz GaAs MMIC
Packaged Low Noise Amplifier
Page 1 of 7
L1007-QT
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
February 2007 - Rev 08-Feb-07
12 dB Gain
2 dB Noise Figure
3x3 QFN Package
Single Power Supply
3-5 V, 40 mA Self Bias
On-Chip ESD Protection
Features
Electrical Characteristics (T=25oC)
Circuit Description
Mimix Broadband’s 3.5 to 8.0 GHz low noise
amplifier is packaged in surface mount 3x3 QFN
package. The device is a self-biased, single supply
design with 12 dB gain and 2 dB noise figure. This
MMIC uses Mimix Broadband’s 0.25um optical
pHEMT process.
Supply Voltage
RF Input Power
Storage Temperature (Tstg)
Junction Temperature
Operating Temperature
Operation beyond these conditions may cause permanent damage
to the device.
+6 V
+10 dBm
-55 oC to +125 oC
175 oC
-40 oC to +85oC
Absolute Maximum Ratings
Frequency Range
Gain
Input Return Loss
Noise Figure
Output P1dB
Output IP3
Supply Voltage
Parameter
Units
GHz
dB
dB
dBm
dBm
V
Min.
3.5
-
-
-
-
-
-
Typ.
-
12
-10
2.0
13
22
3
Max.
8
-
-
-
-
-
-
Typical Parameters
Frequency
Gain
IP Return Loss
Op Return Loss
NF
Parameter
3.5
13
-15
-7.5
2.2
4
13
-15
-11
1.5
5
12.5
-11
-14
1.8
6
11
-12.5
-15
1.5
Typical
7
10
-12.5
-15
1.8
8
7.5
-10
-10
2.4
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| XL1007-QT_07 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:3.5-8.0 GHz GaAs MMIC Packaged Low Noise Amplifier |
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| XL1007-QT-EV1 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:3.5-8.0 GHz GaAs MMIC Packaged Low Noise Amplifier |
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