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參數(shù)資料
| 型號(hào)： | XM28C040PM-20 |
| 英文描述： | High Density 5 Volt Byte Alterable Nonvolatile Memory Array |
| 中文描述： | 高密度5伏可變字節(jié)非易失性存儲(chǔ)器陣列 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 25K |
| 代理商： | XM28C040PM-20 |
7053 8/13/97 T0/C0/D0 SH
Xicor, 1995, 1996 Patents Pending
1
Characteristics subject to change without notice
4 Megabit Puma Module
XM28C040P
512K x 8 Bit
High Density 5 Volt Byte Alterable Nonvolatile Memory Array
FEATURES
High Density Memory Module
—150ns, 200ns, and 250ns Access Times
Available
—4 Megabit Memory in 1 square inch.
Flexible Multiplane Architecture
—Four Separate Chip Selects
—32 Separate I/Os
User Configurable I/Os—x8, x16, or x32
User Configurable Page Size—64 Double-
words, 128 Words, or 256 Bytes
—Concurrent Read/Write Operations
Able to Continue Reading During a
Nonvolatile Write Cycle.
5 Volt Byte or Page Alterable
—No Erase Before Write
Software Data Protection
Early End of Write Polling
—DATA Polling
—Toggle Bit Polling
High Reliability
—Endurance: 100,000 Cycles
—Data Retention: 100 Years
DESCRIPTION
The XM28C040P is a high density CMOS byte alter-
able nonvolatile memory array constructed on a co-
fired ceramic substrate using Xicor’s 128K x 8 compo-
nents in 32-pad leadless chip carriers. The Substrate is
a 66-pin ceramic pin grid array.
The module is configured with four separate chip
enable and write enable inputs and 32 separate I/Os.
This, along with the small footprint, provides the end
user with a large degree of flexibility in board layout and
memory configuration. In addition, with the large num-
ber of pins and the growth path being implemented, the
module will be able to grow to 16 megabits.
FUNCTIONAL DIAGRAM
128K x 8
128K x 8
128K x 8
128K x 8
OE WE1 CE1
WE2 CE2
WE3 CE3
WE4 CE4
A0-A16 I/O0-I/O7
I/O8-I/O15
I/O16-I/O23
I/O24-I/O31
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| XM28C040PM-25 | High Density 5 Volt Byte Alterable Nonvolatile Memory Array |
| XM28C040P | High Density 5 Volt Byte Alterable Nonvolatile Memory Array(4M 非易失性存儲(chǔ)器陣列) |
| XM28C040P-15 | High Density 5 Volt Byte Alterable Nonvolatile Memory Array |
| XM28C040P-20 | High Density 5 Volt Byte Alterable Nonvolatile Memory Array |
| XM28C040P-25 | High Density 5 Volt Byte Alterable Nonvolatile Memory Array |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| XM28C040PM-25 | 制造商:XICOR 制造商全稱:Xicor Inc. 功能描述:High Density 5 Volt Byte Alterable Nonvolatile Memory Array |
| XM28C080S-18 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EEPROM Module |
| XM28C080S-25 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EEPROM Module |
| XM28C080SI-18 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EEPROM Module |
| XM28C080SI-25 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EEPROM Module |
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