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參數資料
| 型號： | XN01872 |
| 英文描述： | Composite Device - Composite Transistors |
| 中文描述： | 復合設備-復合晶體管 |
| 文件頁數： | 1/3頁 |
| 文件大?。?/td> | 85K |
| 代理商： | XN01872 |
Composite Transistors
XN01871
(XN1871)
Silicon n-channel junction FET
1
Publication date: February 2004
SJJ00034BED
For low-frequency amplification
■
Features
Two elements incorporated into one package
(Source-coupled FETs)
Reduction of the mounting area and assembly cost by one half
■
Basic Part Number
2SK0198 (2SK198)
×
2
■
Absolute Maximum Ratings
T
a
=
25
°
C
1: Gate (FET1)
2: Gate (FET2)
3: Drain (FET2)
EIAJ: SC-74A
4:Source
5:Drain (FET1)
Mini5-G1 Package
Unit: mm
Internal Connection
Marking Symbol: 5T
Parameter
Symbol
Rating
Unit
Drain-source voltage
V
DSX
30
V
Gate-drain voltage (Source open)
V
GDO
I
D
30
V
Drain curennt
20
mA
Gate current
I
G
10
mA
Total power dissipation
P
T
T
ch
T
stg
300
mW
Channel temperature
150
°
C
°
C
Storage temperature
55 to
+
150
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.90
1.9
(0.95) (0.95)
0.16
+0.10
2
+
–
1
+
–
1
0
+
–
1
(
0
±
0
+
–
0.30
+0.10
5
4
3
1
2
+0.20
5
10
Note) The part number in the parenthesis shows conventional part number.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Drain-source cutoff current
I
DSS
V
DS
=
10
V, V
GS
=
0
V
GS
=
30 V, V
DS
=
0
V
DS
=
10 V, I
D
=
10
μ
A
V
DS
=
10 V, I
D
=
0.5 mA, f
=
1 MHz
V
DS
=
10 V, V
GS
=
0, f
=
1 kHz
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
0.5
12
mA
Gate-source cutoff current
I
GSS
V
GSC
100
1.5
nA
Gate-source cutoff voltage
0.1
V
Mutual conductance
g
m
4
mS
4
12
Short-circuit forward transfer capacitance
(Common source)
C
iss
14
pF
Reverse transfer capacitance
(Common source)
C
rss
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
3.5
pF
Noise voltage
NV
V
DS
=
30 V, I
D
=
1 mA, G
V
=
80 dB
R
g
=
100 k
, Function
=
FLAT
60
mV
5
FET2
FET1
4
3
2
1
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