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參數資料
型號: XN04401
廠商: PANASONIC CORP
元件分類: 功率晶體管
英文描述: Silicon PNP epitaxial planar type
中文描述: 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: ROHS COMPLIANT, MINI6-G1, SC-74, 6 PIN
文件頁數: 1/4頁
文件大?。?/td> 103K
代理商: XN04401
1
Publication date: February 2004
SJJ00071BED
Composite Transistors
XN04401
(XN4401)
Silicon PNP epitaxial planar type
For general amplification
Features
Two elements incorporated into one package
Reduction of the mounting area and assembly cost by one half
Basic Part Number
2SB0709A (2SB709A)
×
2
Absolute Maximum Ratings
T
a
=
25
°
C
Unit: mm
Internal Connection
Marking Symbol: 5K
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Tr2
Tr1
5
4
3
2
1
6
Note) The part number in the parenthesis shows conventional part number.
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
10
μ
A, I
E
=
0
I
C
=
2 mA, I
B
=
0
I
E
=
10
μ
A, I
C
=
0
V
CB
=
20 V, I
E
=
0
V
CE
=
10 V, I
B
=
0
V
CE
=
10 V, I
C
=
2 mA
I
C
=
100 mA, I
B
=
10 mA
V
CB
=
10 V, I
E
=
1 mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
60
50
7
V
Collector-emitter voltage (Base open)
V
CEO
V
Emitter-base voltage (Collector open)
V
EBO
I
CBO
V
Collector-base cutoff current (Emitter open)
0.1
100
μ
A
μ
A
Collector-emitter cutoff current (Base open)
I
CEO
Forward current transfer ratio
h
FE
160
460
Collector-emitter saturation voltage
V
CE(sat)
0.3
0.5
V
Transition frequency
f
T
C
ob
80
MHz
Collector output capacitance
(Common base, input open circuited)
2.7
pF
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
60
50
7
100
200
V
Collector-emitter voltage (Base open)
V
CEO
V
EBO
V
Emitter-base voltage (Collector open)
V
Collector current
I
C
mA
Peak collector current
I
CP
P
T
T
j
mA
Total power dissipation
300
mW
Junction temperature
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
1: Collector (Tr1)
2: Base (Tr2)
3: Emitter (Tr2)
EIAJ : SC-74
4: Collector (Tr2)
5: Base (Tr1)
6: Emitter (Tr1)
Mini6-G1 Package
2.90
1.9
±
(0.95)
0.16
+0.10
2
+
1
+
1
0
+
1
(
0
±
0
+
0.30
+0.10
0.50
+0.10
(0.95)
6
5
4
1
3
2
+0.20
5
10
相關PDF資料
PDF描述
XN04402 Silicon PNP epitaxial planer transistor
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相關代理商/技術參數
參數描述
XN04401(XN4401) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:複合デバイス - 複合トランジスタ
XN0440100L 功能描述:TRANS ARRAY PNP/PNP MINI-6P RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 陣列 系列:- 標準包裝:10,000 系列:- 晶體管類型:2 NPN(雙) 電流 - 集電極 (Ic)(最大):100mA 電壓 - 集電極發射極擊穿(最大):45V Ib、Ic條件下的Vce飽和度(最大):600mV @ 5mA,100mA 電流 - 集電極截止(最大):- 在某 Ic、Vce 時的最小直流電流增益 (hFE):200 @ 2mA,5V 功率 - 最大:250mW 頻率 - 轉換:250MHz 安裝類型:表面貼裝 封裝/外殼:6-TSSOP,SC-88,SOT-363 供應商設備封裝:PG-SOT363-6 包裝:帶卷 (TR) 其它名稱:SP000747402
XN04402 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planer transistor
XN04402(XN4402) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:複合デバイス - 複合トランジスタ
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