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參數資料
型號: XN04504(XN4504)
英文描述: Composite Device - Composite Transistors
中文描述: 復合設備-復合晶體管
文件頁數: 1/3頁
文件大小: 85K
代理商: XN04504(XN4504)
1
Publication date: February 2004
SJJ00077BED
Composite Transistors
XN04503
(XN4503)
Silicon NPN epitaxial planar type
For amplification of low frequency output
Features
Two elements incorporated into one package
Reduction of the mounting area and assembly cost by one half
Basic Part Number
2SC1788
×
2
Absolute Maximum Ratings
T
a
=
25
°
C
Unit: mm
Internal Connection
Marking Symbol: 5Y
Tr2
Tr1
5
4
3
2
1
6
Note) The part number in the parenthesis shows conventional part number.
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
10
μ
A, I
E
=
0
I
C
=
1
mA, I
B
=
0
I
E
=
10
μ
A, I
C
=
0
V
CB
=
25 V, I
E
=
0
V
CE
=
20 V, I
B
=
0
V
CE
=
2 V, I
C
=
500 mA
V
CE
=
2 V, I
C
=
1 A
I
C
=
5
00 mA, I
B
=
2
0 mA
I
C
=
5
00 mA, I
B
=
5
0 mA
V
CB
=
10 V, I
E
=
50 mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
25
V
Collector-emitter voltage (Base open)
V
CEO
20
V
Emitter-base voltage (Collector open)
V
EBO
I
CBO
7
V
Collector-base cutoff current (Emitter open)
0.1
μ
A
μ
A
Collector-emitter cutoff current (Base open)
I
CEO
1
Forward current transfer ratio
*
h
FE1
h
FE2
65
350
50
Collector-emitter saturation voltage
*
V
CE(sat)
0.2
0.4
V
Base-emitter saturation voltage
*
V
BE(sat)
f
T
C
ob
1.2
V
Transition frequency
150
MHz
Collector output capacitance
(Common base, input open circuited)
6
pF
1: Collector (Tr1)
2: Base (Tr2)
3: Emitter (Tr2)
EIAJ : SC-74
4: Collector (Tr2)
5: Base (Tr1)
6: Emitter (Tr1)
Mini6-G1 Package
2.90
1.9
±
(0.95)
0.16
+0.10
2
+
1
+
1
0
+
1
(
0
±
0
+
0.30
+0.10
0.50
+0.10
(0.95)
6
5
4
1
3
2
+0.20
5
10
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Pulse measurement
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
25
V
Collector-emitter voltage (Base open)
V
CEO
20
V
Emitter-base voltage (Collector open)
V
EBO
I
C
7
V
Collector current
0.5
A
Peak collector current
I
CP
1
A
Total power dissipation
P
T
T
j
T
stg
300
mW
Junction temperature
150
°
C
°
C
Storage temperature
55 to
+
150
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相關代理商/技術參數
參數描述
XN04505 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planar type
XN04505(XN4505) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:複合デバイス - 複合トランジスタ
XN0450500L 功能描述:TRANS ARRAY NPN/NPN MINI-6P RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 陣列 系列:- 標準包裝:10,000 系列:- 晶體管類型:2 NPN(雙) 電流 - 集電極 (Ic)(最大):100mA 電壓 - 集電極發射極擊穿(最大):45V Ib、Ic條件下的Vce飽和度(最大):600mV @ 5mA,100mA 電流 - 集電極截止(最大):- 在某 Ic、Vce 時的最小直流電流增益 (hFE):200 @ 2mA,5V 功率 - 最大:250mW 頻率 - 轉換:250MHz 安裝類型:表面貼裝 封裝/外殼:6-TSSOP,SC-88,SOT-363 供應商設備封裝:PG-SOT363-6 包裝:帶卷 (TR) 其它名稱:SP000747402
XN04506 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PAIR | NPN | 20V V(BR)CEO | 300MA I(C) | SC-74
XN04506(XN4506) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Composite Device - Composite Transistors
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