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參數資料
| 型號： | XN5531 |
| 英文描述： | Composite Device - Composite Transistors |
| 中文描述： | 復合設備-復合晶體管 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 84K |
| 代理商： | XN5531 |
1
Publication date: August 2003
SJJ00089BED
Composite Transistors
XN05501
(XN5501)
Silicon NPN epitaxial planar type
For general amplification
■
Features
Two elements incorporated into one package
Reduction of the mounting area and assembly cost by one half
■
Basic Part Number
2SD0601A (2SD601A)
×
2
■
Absolute Maximum Ratings
T
a
=
25
°
C
Unit: mm
Internal Connection
Marking Symbol: 5L
5
4
3
2
1
6
Tr2
Tr1
Note) The part number in the parenthesis shows conventional part number.
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
Rating
60
50
7
Unit
V
V
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
100
mA
Peak collector current
I
CP
200
mA
Total power dissipation
P
T
T
j
300
mW
Junction temperature
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Ratio between 2 elements
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
10
μ
A, I
E
=
0
I
C
=
2 mA, I
B
=
0
I
E
=
10
μ
A, I
C
=
0
V
CB
=
20 V, I
E
=
0
V
CE
=
10 V, I
B
=
0
V
CE
=
10 V, I
C
=
2 mA
V
CE
=
10 V, I
C
=
2 mA
60
V
Collector-emitter voltage (Base open)
V
CEO
50
V
Emitter-base voltage (Collector open)
V
EBO
I
CBO
7
V
Collector-base cutoff current (Emitter open)
0.1
μ
A
μ
A
Collector-emitter cutoff current (Base open)
I
CEO
100
Forward current transfer ratio
h
FE
ratio
*
h
FE
160
460
h
FE(Small/
0.50
0.99
Large)
V
CE(sat)
Collector-emitter saturation voltage
I
C
=
100 mA, I
B
=
10 mA
V
CB
=
10 V, I
E
=
2 mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
0.1
0.3
V
Transition frequency
f
T
C
ob
150
MHz
Collector output capacitance
(Common base, input open circuited)
3.5
pF
1: Collector (Tr1)
2: Emitter (Tr2)
3: Collector (Tr2)
EIAJ: SC-74
4: Base (Tr2)
5: Base (Tr1)
6: Emitter (Tr1)
Mini6-G1 Package
2.90
1.9
±
0.1
(0.95)
0.16
+0.10
2
+
–
1
+
–
1
0
+
–
1
0
±
0
0
±
0
+
–
0.30
+0.10
0.50
+0.10
(0.95)
6
5
4
1
3
2
+0.20
5
10
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PDF描述 |
|---|---|
| XN05553 | Composite Device - Composite Transistors |
| XN5553 | Composite Device - Composite Transistors |
| XN05531(XN5531) | 複合デバイス － 複合トランジスタ |
| XN05501(XN5501) | 複合デバイス － 複合トランジスタ |
| XN05553(XN5553) | 複合デバイス － 複合トランジスタ |
相關代理商/技術參數 |
參數描述 |
|---|---|
| XN5553 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planer transistor |
| XN5601 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planer transistor |
| XN5E-BV401MR | 制造商:IDEC Corporation 功能描述:SWITCH EMERGENCY STOP 1NC 250VAC 制造商:IDEC Corporation 功能描述:SWITCH, EMERGENCY STOP, 1NC, 250VAC; Contact Configuration:SPST-NC; Switch Operation:On-Off; Contact Voltage DC Nom:250V; Contact Voltage AC Nom:250V; Contact Current Max:5A; Actuator Style:Mushroom; Actuator Diameter:40mm; Series:XN;RoHS Compliant: Yes 制造商:IDEC CORPORATION 功能描述:E-Stop 30mm Flush Type |
| XN5E-BV402MR | 制造商:IDEC Corporation 功能描述:SWITCH; E-STOP; FLUSH BEZEL; NON-ILLUMINATED; 40MM MUSHROOM; 2NC 制造商:IDEC Corporation 功能描述:Emergency Stop Switch 制造商:IDEC Corporation 功能描述:SWITCH, EMERGENCY STOP, 2NC, 250VAC; Contact Configuration:DPST-NC; Switch Operation:On-Off; Contact Voltage DC Nom:250V; Contact Voltage AC Nom:250V; Contact Current Max:5A; Actuator Style:Mushroom; Actuator Diameter:40mm; Series:XN;RoHS Compliant: Yes 制造商:IDEC CORPORATION 功能描述:Electromechanical Switch Emergency Stop Switch N.C. DPST 5A |
| XN5E-BV403MR | 制造商:IDEC Corporation 功能描述:Emergency Stop Switch 制造商:IDEC Corporation 功能描述:SWITCH, EMERGENCY STOP, 3NC, 250VAC; Contact Configuration:3PST-NC; Switch Operation:On-Off; Contact Voltage DC Nom:250V; Contact Voltage AC Nom:250V; Contact Current Max:5A; Actuator Style:Mushroom; Actuator Diameter:40mm; Series:XN;RoHS Compliant: Yes 制造商:IDEC CORPORATION 功能描述:E-Stop 30mm Flush Type |
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