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參數資料
| 型號： | XN6501 |
| 英文描述： | Composite Device - Composite Transistors |
| 中文描述： | 復合設備-復合晶體管 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 84K |
| 代理商： | XN6501 |
1
Publication date: August 2003
SJJ00108BED
Composite Transistors
XN06501
(XN6501)
Silicon NPN epitaxial planar type
For general amplification
■
Features
Two elements incorporated into one package
Reduction of the mounting area and assembly cost by one half
■
Basic Part Number
2SD0601A (2SD601A)
×
2
■
Absolute Maximum Ratings
T
a
=
25
°
C
Unit: mm
Internal Connection
Marking Symbol: 5N
5
4
3
2
1
6
Tr2
Tr1
Note) The part number in the parenthesis shows conventional part number.
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
V
CBO
V
CEO
V
EBO
I
C
60
50
7
100
V
V
V
mA
Peak collector current
I
CP
200
mA
Total power dissipation
P
T
T
j
300
mW
Junction temperature
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Ratio between 2 elements
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
10
μ
A, I
E
=
0
I
C
=
2 mA, I
B
=
0
I
E
=
10
μ
A, I
C
=
0
V
CB
=
20 V, I
E
=
0
V
CE
=
10 V, I
B
=
0
V
CE
=
10 V, I
C
=
2 mA
V
CE
=
10 V, I
C
=
2 mA
60
V
Collector-emitter voltage (Base open)
V
CEO
50
V
Emitter-base voltage (Collector open)
V
EBO
I
CBO
7
V
Collector-base cutoff current (Emitter open)
0.1
μ
A
μ
A
Collector-emitter cutoff current (Base open)
I
CEO
100
Forward current transfer ratio
h
FE
ratio
*
h
FE
160
460
h
FE(Small/
0.50
0.99
Large)
V
CE(sat)
Collector-emitter saturation voltage
I
C
=
100 mA, I
B
=
10 mA
V
CB
=
10 V, I
E
=
2 mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
0.1
0.3
V
Transition frequency
f
T
C
ob
150
MHz
Collector output capacitance
(Common base, input open circuited)
3.5
pF
1: Collector (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
EIAJ: SC-74
4: Base (Tr2)
5: Emitter (Tr2)
6: Emitter (Tr1)
Mini6-G1 Package
2.90
1.9
±
0.1
(0.95)
0.16
+0.10
2
+
–
1
+
–
1
0
+
–
1
0
±
0
0
±
0
+
–
0.30
+0.10
0.50
+0.10
(0.95)
6
5
4
1
3
2
+0.20
5
10
相關PDF資料 |
PDF描述 |
|---|---|
| XN06501(XN6501) | Composite Device - Composite Transistors |
| XN06534 | TRANSISTOR | BJT | PAIR | NPN | 20V V(BR)CEO | 15MA I(C) | SC-74 |
| XN06534(XN6534) | Composite Device - Composite Transistors |
| XN06537 | TRANSISTOR | BJT | PAIR | NPN | 12V V(BR)CEO | 30MA I(C) | SC-74 |
| XN06537(XN6537) | 複合デバイス － 複合トランジスタ |
相關代理商/技術參數 |
參數描述 |
|---|---|
| XN6534 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planer transistor |
| XN6537 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planer transistor |
| XN6542 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planer transistor |
| XN6543 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planer transistor |
| XN6A554 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planer transistor |
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