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參數資料
| 型號： | XN6543 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN epitaxial planer transistor |
| 中文描述： | 2 CHANNEL, L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, MINI6-G1, SC-74, 6 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 33K |
| 代理商： | XN6543 |
1
Composite Transistors
XN6543
Silicon NPN epitaxial planer transistor
For low-noise amplification (2GHz band)
I
Features
G
Two elements incorporated into one package.
G
Reduction of the mounting area and assembly cost by one half.
I
Basic Part Number of Element
G
2SC3904
×
2 elements
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Marking Symbol:
9Y
Internal Connection
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
15
V
Collector to emitter voltage
10
V
Emitter to base voltage
2
V
Collector current
65
mA
Total power dissipation
200
mW
Junction temperature
150
C
Storage temperature
–55 to +150
C
Rating
of
element
Overall
1 : Collector (Tr1)
2 : Base (Tr1)
3 : Collector (Tr2)
4 : Base (Tr2)
5 : Emitter (Tr2)
6 : Emitter (Tr1)
EIAJ : SC–74
Mini Type Package (6–pin)
2.8
+0.2
–0.3
1.5
0.65
±
0.15
0.65
±
0.15
1
6
5
4
3
2
1
±
0
0
0
1
±
0
+0.25
0
+
–
0
+
–
2
+
–
1
+
–
0
0.4
±
0.2
0
0
+
–
0.1 to 0.3
6
1
2
Tr2
Tr1
5
4
3
I
Electrical Characteristics
(Ta=25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector cutoff current
I
CBO
I
EBO
h
FE
V
CB
= 10V, I
E
= 0
V
EB
= 1V, I
C
= 0
V
CE
= 8V, I
C
= 20mA
V
CE
= 8V, I
C
= 20mA
V
CE
= 8V, I
C
= 20mA
V
CB
= 10V, I
E
= 0, f = 1MHz
V
CE
= 8V, I
C
= 20mA, f = 1.5GHz
V
CE
= 8V, I
C
= 20mA, f = 1.5GHz
V
CE
= 8V, I
C
= 7mA, f = 1.5GHz
1
μ
A
μ
A
Emitter cutoff current
1
Forward current transfer ratio
50
120
300
Forward current transfer h
FE
ratio
Transition frequency
h
FE
(small/large)
*1
f
T
C
ob
| S
21e
|
2
GUM
0.5
0.99
7.0
8.5
GHz
Collector output capacitance
0.6
1.0
pF
Forward transfer gain
7
9
dB
Power gain
10
dB
Noise figure
NF
2.2
3.0
dB
*1
Ratio between 2 elements
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