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參數(shù)資料
| 型號(hào)： | XP1020-BD-000V |
| 廠商： | MIMIX BROADBAND INC |
| 元件分類： | 衰減器 |
| 英文描述： | 11.0-19.0 GHz GaAs MMIC Power Amplifier |
| 中文描述： | 11000 MHz - 19000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封裝： | ROHS COMPLIANT, DIE-5 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 318K |
| 代理商： | XP1020-BD-000V |
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
January 2007 - Rev 30-Jan-07
Mimix Broadband’s two stage 11.0-19.0 GHz GaAs
MMIC power amplifier has a small signal gain of
20.0 dB with a +27.0 dBm saturated output power.
This MMIC uses Mimix Broadband’s 0.15 μm GaAs
PHEMT device model technology, and is based upon
electron beam lithography to ensure high
repeatability and uniformity. The chip has surface
passivation to protect and provide a rugged part with
backside via holes and gold metallization to allow
either a conductive epoxy or eutectic solder die
attach process. This device is well suited for
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM
and VSAT applications.
11.0-19.0 GHz GaAs MMIC
Power Amplifier
Compact, Low Cost Design
20.0 dB Small Signal Gain
+27.0 dBm Saturated Output Power
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883
Method 2010
Features
General Description
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Parameter
Frequency Range (f)
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness ( S21)
Reverse Isolation (S12)
Saturated Output Power (Psat)
Drain Bias Voltage (Vd1,2)
Gate Bias Voltage (Vg1)
Supply Current (Id) (Vd=5.0V, Vg=-0.9V Typical)
Units
GHz
dB
dB
dB
dB
dB
dBm
VDC
VDC
mA
Min.
11.0
-
-
-
-
-
-
-
-1.0
-
Typ.
-
12.0
8.0
20.0
+/-1.0
40.0
+27.0
+5.0
-0.9
380
Max.
19.0
-
-
-
-
-
-
+8.0
0.1
420
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+9.0 VDC
500 mA
+0.3 VDC
+17.0 dBm
-65 to +165
O
C
-55 to MTTF Table
MTTF Table
Chip Device Layout
Page 1 of 6
1
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
1
P1020-BD
XP1020-BD
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| XP1020-BD-EV1 | 11.0-19.0 GHz GaAs MMIC Power Amplifier |
| XP1020-QE | 11.0-19.0 GHz GaAs MMIC Power Amplifier, QFN |
| XP1020-QE-0N00 | 11.0-19.0 GHz GaAs MMIC Power Amplifier, QFN |
| XP1020-QE-EV1 | 11.0-19.0 GHz GaAs MMIC Power Amplifier, QFN |
| XP1021-BD | 17.0-22.0 GHz GaAs MMIC Power Amplifier |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| XP1020-BD-EV1 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:11.0-19.0 GHz GaAs MMIC Power Amplifier |
| XP1020-QE | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:11.0-19.0 GHz GaAs MMIC Power Amplifier, QFN |
| XP1020-QE-0N00 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:11.0-19.0 GHz GaAs MMIC Power Amplifier, QFN |
| XP1020-QE-EV1 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:11.0-19.0 GHz GaAs MMIC Power Amplifier, QFN |
| XP1021-BD | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:17.0-22.0 GHz GaAs MMIC Power Amplifier |
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