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參數資料
| 型號： | XP1022-BD-EV1 |
| 廠商： | Mimix Broadband, Inc. |
| 英文描述： | 17.0-25.0 GHz GaAs MMIC Power Amplifier |
| 中文描述： | 17.0-25.0 GHz的砷化鎵單片功率放大器 |
| 文件頁數： | 1/9頁 |
| 文件大小： | 249K |
| 代理商： | XP1022-BD-EV1 |
17.0-25.0 GHz GaAs MMIC
Power Amplifier
Excellent Transmit Output Stage
Temperature Compensated Output Detector
On-Chip ESD Protection
20.0 dB Small Signal Gain
+28.0 dBm P1dB Compression Point
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883 Method 2010
Features
Chip Device Layout
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id1,2,3)
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
145, 290, 580 mA
+0.3 VDC
+19.0 dBm
-65 to +165
O
C
-55 to MTTF Graph
1
MTTF Graph
1
Page 1 of 9
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Parameter
Frequency Range (f)
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness ( S21)
Reverse Isolation (S12)
Output Power for 1dB Compression (P1dB)
Drain Bias Voltage (Vd1,2,3) (Vdet)
Gate Bias Voltage (Vg1,2,3)
Supply Current (Id1) (Vd=5.0V, Vg=-0.7V Typical)
Supply Current (Id2) (Vd=5.0V, Vg=-0.7V Typical)
Supply Current (Id3) (Vd=5.0V, Vg=-0.7V Typical)
Detector (diff) Output at 20 dBm
3
(2) Measured using constant current.
(3) Measured with Vdet=5.0V
Units
GHz
dB
dB
dB
dB
dB
dBm
VDC
VDC
mA
mA
mA
VDC
Min.
17.0
-
-
-
-
-
-
-
-1.0
-
-
-
-
Typ.
-
9.0
10.0
20.0
+/-2.0
50.0
+28.0
+5.0
-0.7
100
200
400
0.38
Max.
25.0
-
-
-
-
-
-
+5.5
0.0
120
240
480
-
2
P1022-BD
Mimix Broadband’s three stage 17.0-25.0 GHz GaAs
MMIC buffer amplifier has a small signal gain of 20.0
dB with a +28.0 dBm P1dB output compression point
across the band. The device also includes an on-chip
temperature compensated output power detector.
This MMIC uses Mimix Broadband’s 0.15 μm GaAs
PHEMT device model technology, and is based upon
electron beam lithography to ensure high
repeatability and uniformity. The chip has surface
passivation to protect and provide a rugged part with
backside via holes and gold metallization to allow
either a conductive epoxy or eutectic solder die
attach process. This device is well suited for
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM
and VSAT applications.
General Description
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
February 2007 - Rev 05-Feb-07
相關PDF資料 |
PDF描述 |
|---|---|
| XP1022-QF | 17.0-25.0 GHz GaAs MMIC Power Amplifier, QFN |
| XP1022-QF-0N00 | 17.0-25.0 GHz GaAs MMIC Power Amplifier, QFN |
| XP1022-QF-EV1 | 17.0-25.0 GHz GaAs MMIC Power Amplifier, QFN |
| XP1023-BD | 24.0-34.0 GHz GaAs MMIC Power Amplifier |
| XP1023-BD-000V | 24.0-34.0 GHz GaAs MMIC Power Amplifier |
相關代理商/技術參數 |
參數描述 |
|---|---|
| XP1022DS-PA | 制造商:Freescale Semiconductor 功能描述: |
| XP1022-QF | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:17.0-25.0 GHz GaAs MMIC Power Amplifier, QFN |
| XP1022-QF-0N00 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:17.0-25.0 GHz GaAs MMIC Power Amplifier, QFN |
| XP1022-QF-EV1 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:17.0-25.0 GHz GaAs MMIC Power Amplifier, QFN |
| XP1023-BD | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:24.0-34.0 GHz GaAs MMIC Power Amplifier |
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