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參數(shù)資料
| 型號： | XP152A11E5MR |
| 廠商： | TOREX SEMICONDUCTOR LTD. |
| 英文描述： | Power MOS FET |
| 中文描述： | 功率MOS場效應管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 52K |
| 代理商： | XP152A11E5MR |
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P-Channel Power MOS FET
DMOS Structure
Low On-State Resistance : 0.45
(max)
Ultra High-Speed Switching
Gate Protect Diode Built-in
SOT - 23 Package
Applications
Notebook PCs
Cellular and portable phones
On - board power supplies
Li - ion battery systems
General Description
Features
The XP152A11E5MR is a P-Channel Power MOS FET with low on-state
Low on-state resistance :
Rds (on) = 0.25
( Vgs = -10V )
resistance and ultra high-speed switching characteristics.
Rds (on) = 0.45
( Vgs = -4.5V )
Ultra high-speed switching
Because high-speed switching is possible, the IC can be efficiently
set thereby saving energy.
Gate Protect Diode Built-in
Operational Voltage :
-4.5V
In order to counter static, a gate protect diode is built-in.
The small SOT-23 package makes high density mounting possible.
High density mounting :
SOT - 23
Pin Configuration
Pin Assignment
PIN NUMBER
PIN NAME
G
Gate
S
Source
D
Drain
Equivalent Circuit
Absolute Maximum Ratings
Ta=25
O
C
UNITS
SYMBOL
RATINGS
Vdss
Vgss
Id
Idp
Idr
Pd
-30
+ 20
-0.7
-2.8
-0.7
0.5
V
V
A
A
A
W
Tch
150
O
C
Tstg
-55 to 150
O
C
P - Channel MOS FET
( 1 device built-in )
( note ) : When implemented on a ceramic PCB
Storage Temperature
Reverse Drain Current
Continuous Channel
Power Dissipation (note)
Channel Temperature
Drain - Source Voltage
Gate - Source Voltage
Drain Current (DC)
Drain Current (Pulse)
FUNCTION
2
PARAMETER
1
3
SOT - 23 Top View
1
G
2
S
3
D
1
2
3
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| XP152A11E5MR_1 | 制造商:TOREX 制造商全稱:Torex Semiconductor 功能描述:Power MOSFET |
| XP152A11E5MR_12 | 制造商:TOREX 制造商全稱:Torex Semiconductor 功能描述:Power MOSFET |
| XP152A11E5MR-G | 制造商:Torex Semiconductor LTD 功能描述:MOSFET P-CH 30V 700MA SOT23 |
| XP152A11E5MRN | 制造商:Torex Semiconductor LTD 功能描述: |
| XP152A12C0MR | 功能描述:MOSFET P-CH 20V 700MA SOT23 RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
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