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參數資料
| 型號： | XP5501 |
| 英文描述： | Composite Device - Composite Transistors |
| 中文描述： | 復合設備-復合晶體管 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 84K |
| 代理商： | XP5501 |
1
Publication date: August 2003
SJJ00190BED
Composite Transistors
XP05501
(XP5501)
Silicon NPN epitaxial planar type
For general amplification
■
Features
Two elements incorporated into one package
Reduction of the mounting area and assembly cost by one half
■
Basic Part Number
2SD0601A (2SD601A)
×
2
■
Absolute Maximum Ratings
T
a
=
25
°
C
Unit: mm
Internal Connection
Marking Symbol: 5L
1
2
3
4
6
5
Tr2
Tr1
Note) The part number in the parenthesis shows conventional part number.
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
Rating
60
50
7
Unit
V
V
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
100
mA
Peak collector current
I
CP
200
mA
Total power dissipation
P
T
T
j
150
mW
Junction temperature
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
5
10
2
±
0
1
±
0
1
3
2
0.2
±
0.05
0.12
+0.05
0
±
0
(
1.3
±
0.1
2.0
±
0.1
0
0
±
0
0
+
–
6
5
4
(0.65) (0.65)
1: Emitter (Tr1)
2: Base (Tr1)
3: Base (Tr2)
EIAJ: SC-88
4: Collector (Tr2)
5: Emitter (Tr2)
6: Collector (Tr1)
SMini6-G1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Ratio between 2 elements
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
10
μ
A, I
E
=
0
I
C
=
2 mA, I
B
=
0
I
E
=
10
μ
A, I
C
=
0
V
CB
=
20 V, I
E
=
0
V
CE
=
10 V, I
B
=
0
V
CE
=
10 V, I
C
=
2 mA
V
CE
=
10 V, I
C
=
2 mA
60
V
Collector-emitter voltage (Base open)
V
CEO
50
V
Emitter-base voltage (Collector open)
V
EBO
I
CBO
7
V
Collector-base cutoff current (Emitter open)
0.1
μ
A
μ
A
Collector-emitter cutoff current (Base open)
I
CEO
100
Forward current transfer ratio
h
FE
ratio
*
h
FE
160
460
h
FE(Small/
0.50
0.99
Large)
V
CE(sat)
Collector-emitter saturation voltage
I
C
=
100 mA, I
B
=
10 mA
V
CB
=
10 V, I
E
=
2 mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
0.3
V
Transition frequency
f
T
C
ob
150
MHz
Collector output capacitance
(Common base, input open circuited)
3.5
pF
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