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參數資料
| 型號： | XP6534 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN epitaxial planer transistor |
| 中文描述： | 2 CHANNEL, VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, SMINI6-G1, SC-88, 6 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 33K |
| 代理商： | XP6534 |
1
Composite Transistors
XP6534
Silicon NPN epitaxial planer transistor
For high-frequency amplification
I
Features
G
Two elements incorporated into one package.
G
Reduction of the mounting area and assembly cost by one half.
I
Basic Part Number of Element
G
2SC2404
×
2 elements
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Marking Symbol:
7F
Internal Connection
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
30
V
Collector to emitter voltage
20
V
Emitter to base voltage
3
V
Collector current
15
mA
Total power dissipation
150
mW
Junction temperature
150
C
Storage temperature
–55 to +150
C
Rating
of
element
Overall
I
Electrical Characteristics
(Ta=25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector to base voltage
V
CBO
V
EBO
h
FE
I
C
= 10
μ
A, I
E
= 0
I
E
= 10
μ
A, I
C
= 0
V
CB
= 6V, I
E
= –1mA
V
CB
= 6V, I
E
= –1mA
V
CB
= 6V, I
E
= –1mA
V
CB
= 6V, I
E
= –1mA, f = 10.7MHz
V
CB
= 6V, I
E
= –1mA, f = 200MHz
V
CB
= 6V, I
E
= –1mA, f = 100MHz
V
CB
= 6V, I
E
= –1mA, f = 100MHz
30
V
Emitter to base voltage
3
V
Forward current transfer ratio
40
260
Forward current transfer h
FE
ratio
Base to emitter voltage
h
FE
(small/large)
*1
V
BE
C
re
f
T
NF
0.5
0.99
720
mV
Common emitter reverse transfer capacitance
0.8
1
pF
Transition frequency
450
650
MHz
Noise figure
3.3
dB
Power gain
PG
24
dB
*1
Ratio between 2 elements
1 : Emitter (Tr1)
2 : Emitter (Tr2)
3 : Base (Tr2)
4 : Collector (Tr2)
5 : Base (Tr1)
6 : Collector (Tr1)
EIAJ : SC–88
S–Mini Type Package (6–pin)
2.1
±
0.1
0
±
0
0
0
2
±
0
0
±
0
0
1.25
±
0.1
0.425
0.425
1
2
3
6
5
4
0.2
±
0.1
0
±
0
0
0
+
–
1
6
5
Tr2
Tr1
2
3
4
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